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Structural defects in Hg1−xCdxI2 layers grown on CdTe substrates by vapor phase epitaxy

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Structural defects in Hg1−xCdxI2 layers grown on CdTe substrates by vapor phase epitaxy

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dc.contributor.author	Sochinskii, N. V.
dc.contributor.author	Muñoz Sanjosé, Vicente
dc.contributor.author	Espeso, J. I.
dc.contributor.author	Baruchel, E.
dc.contributor.author	Marín, C.
dc.contributor.author	Diéguez, E.
dc.date.accessioned	2010-06-08T09:56:57Z
dc.date.available	2010-06-08T09:56:57Z
dc.date.issued	1997
dc.identifier.citation	SOCHINSKII, N.V. ; MUÑOZ, V. ; ESPESO, J.O. ; BARUCHEL, J. ; MARÍN, C. ; DIÉGUEZ, E. Structural defects in Hg1−xCdxI2 layers grown on CdTe substrates by vapor phase epitaxy. En: Journal of Applied Physics, 1997, vol. 82, no. 15	en
dc.identifier.uri	http://hdl.handle.net/10550/12871
dc.description.abstract	Hg1−xCdxI2 20–25-μm-thick layers with a uniform composition in the range of x = 0.1–0.2 were grown on CdTe substrates by vapor phase epitaxy (VPE). The growth was carried out using an α-HgI2 polycrystalline source at 200 °C and in the time range of 30–100 h. The layers were studied by scanning electron microscopy (SEM) and high resolution synchrotron x-ray topography (SXRT). The SEM and SXRT images of Hg1−xCdxI2 VPE layers allow one to identify the defects affecting the layer structure. The two main types of structural defects in the layers are subgrain boundaries and densely spaced striations similar to those referred generally to as vapor grown HgI2 bulk crystals. The effect of the growth time on these defects has been analyzed and on the basis of this it has been possible to grow Hg1−xCdxI2 layers with low defect density.	en_US
dc.language.iso	en	en
dc.subject	Mercury Compounds ; Cadmium Compounds ; Semiconductor Materials ; Vapour Phase Epitaxial Growth ; Semiconductor Growth ; Semiconductor Epitaxial Layers ; Scanning Electron Microscopy ; X-Ray Topography ; Grain Boundaries	en
dc.title	Structural defects in Hg1−xCdxI2 layers grown on CdTe substrates by vapor phase epitaxy	en
dc.type	journal article	es_ES
dc.subject.unesco	UNESCO::FÍSICA	en
dc.identifier.doi	10.1063/1.366352	en
dc.type.hasVersion	VoR	es_ES
dc.identifier.url	http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000082000010004889000001&idtype=cvips&prog=normal&doi=10.1063/1.366352	en