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Temperature dependence of the E2h phonon mode of wurtzite GaN/AlN quantum dots

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Temperature dependence of the E2h phonon mode of wurtzite GaN/AlN quantum dots

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dc.contributor.author Budagosky Marcilla, Jorge Alejandro
dc.contributor.author García Cristóbal, Alberto
dc.contributor.author Cros Stotter, Ana
dc.date.accessioned 2010-05-21T10:56:03Z
dc.date.available 2010-05-21T10:56:03Z
dc.date.issued 2008
dc.identifier.citation BUDAGOSKY, J.A. ; GARCÍA-CRISTOBAL, A. ; CROS, A. Temperature dependence of the E2h phonon mode of wurtzite GaN/AlN quantum dots. En: Journal of Applied Physics, 2008, vol. 104 en
dc.identifier.uri http://hdl.handle.net/10550/4353
dc.description.abstract Raman scattering has been used to study the temperature dependence of the frequency and linewidth of the E2h phonon mode of GaN/AlN quantum dot stacks grown on 6H-SiC. The evolution of the nonpolar phonon mode was analyzed in the temperature range from 80 to 655 K for both quantum dots and barrier materials. The experimental results are interpreted by comparison with a model that takes into account symmetric phonon decay and the different thermal expansions of the constituents of the heterostructure. We find a small increase in the anharmonic parameters of the phonon modes in the heterostructure with respect to bulk. en_US
dc.language.iso en en
dc.subject Aluminium compounds ; Gallium compounds ; III-V semiconductors ; Phonons ; Raman spectra ; Semiconductor quantum dots ; Thermal expansion en
dc.title Temperature dependence of the E2h phonon mode of wurtzite GaN/AlN quantum dots en
dc.type journal article es_ES
dc.subject.unesco UNESCO::FÍSICA en
dc.identifier.doi 10.1063/1.3006892 en
dc.type.hasVersion VoR es_ES
dc.identifier.url http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000104000009094904000001&idtype=cvips&prog=normal&doi=10.1063/1.3006892 en

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