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dc.contributor.author | Budagosky Marcilla, Jorge Alejandro | |
dc.contributor.author | García Cristóbal, Alberto | |
dc.contributor.author | Cros Stotter, Ana | |
dc.date.accessioned | 2010-05-21T10:56:03Z | |
dc.date.available | 2010-05-21T10:56:03Z | |
dc.date.issued | 2008 | |
dc.identifier.citation | BUDAGOSKY, J.A. ; GARCÍA-CRISTOBAL, A. ; CROS, A. Temperature dependence of the E2h phonon mode of wurtzite GaN/AlN quantum dots. En: Journal of Applied Physics, 2008, vol. 104 | en |
dc.identifier.uri | http://hdl.handle.net/10550/4353 | |
dc.description.abstract | Raman scattering has been used to study the temperature dependence of the frequency and linewidth of the E2h phonon mode of GaN/AlN quantum dot stacks grown on 6H-SiC. The evolution of the nonpolar phonon mode was analyzed in the temperature range from 80 to 655 K for both quantum dots and barrier materials. The experimental results are interpreted by comparison with a model that takes into account symmetric phonon decay and the different thermal expansions of the constituents of the heterostructure. We find a small increase in the anharmonic parameters of the phonon modes in the heterostructure with respect to bulk. | en_US |
dc.language.iso | en | en |
dc.subject | Aluminium compounds ; Gallium compounds ; III-V semiconductors ; Phonons ; Raman spectra ; Semiconductor quantum dots ; Thermal expansion | en |
dc.title | Temperature dependence of the E2h phonon mode of wurtzite GaN/AlN quantum dots | en |
dc.type | journal article | es_ES |
dc.subject.unesco | UNESCO::FÍSICA | en |
dc.identifier.doi | 10.1063/1.3006892 | en |
dc.type.hasVersion | VoR | es_ES |
dc.identifier.url | http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000104000009094904000001&idtype=cvips&prog=normal&doi=10.1063/1.3006892 | en |