NAGIOS: RODERIC FUNCIONANDO

Phonon-plasmon coupling in Si doped GaN nanowires

Repositori DSpace/Manakin

IMPORTANT: Aquest repositori està en una versió antiga des del 3/12/2023. La nova instal.lació está en https://roderic.uv.es/

Phonon-plasmon coupling in Si doped GaN nanowires

dc.contributor.author	Rozas-Jiménez, E.
dc.contributor.author	Cros Stotter, Ana
dc.contributor.author	Murcia Mascarós, Sonia
dc.contributor.author	Fang, Zhihua
dc.contributor.author	Daudin, Bruno
dc.date.accessioned	2017-03-23T14:25:03Z
dc.date.available	2017-03-23T14:25:03Z
dc.date.issued	2016
dc.identifier.citation	Rozas-Jiménez, E. Cros Stotter, Ana Murcia Mascarós, Sonia Fang, Zhihua Daudin, Bruno 2016 Phonon-plasmon coupling in Si doped GaN nanowires Materials Science in Semiconductor Processing 55 63 66
dc.identifier.uri	http://hdl.handle.net/10550/57846
dc.description.abstract	The vibrational properties of silicon doped GaN nanowires with diameters comprised between 40 and 100 nm are studied by Raman spectroscopy through excitation with two different wavelengths: 532 and 405 nm. Excitation at 532 nm does not allow the observation of the coupled phonon-plasmon upper mode for the intentionally doped samples. Yet, excitation at 405 nm results in the appearance of a narrow peak at frequencies close to that of the uncoupled A1(LO) mode for all samples. This behavior points to phonon-plasmon scattering mediated by large phonon wave-vector in these thin and highly doped nanowires.
dc.language.iso	eng
dc.relation.ispartof	Materials Science in Semiconductor Processing, 2016, vol. 55, p. 63-66
dc.subject	Ciència dels materials
dc.subject	Nanotecnologia
dc.subject	Espectroscòpia Raman
dc.title	Phonon-plasmon coupling in Si doped GaN nanowires
dc.type	journal article	es_ES
dc.date.updated	2017-03-23T14:25:03Z
dc.identifier.doi	10.1016/j.mssp.2016.02.017
dc.identifier.idgrec	116580
dc.rights.accessRights	open access	es_ES