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Bottom‐Up Fabrication of Semiconductive Metal-Organic Framework Ultrathin Films

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Bottom‐Up Fabrication of Semiconductive Metal-Organic Framework Ultrathin Films

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dc.contributor.author	Rubio-Giménez, Víctor
dc.contributor.author	Galbiati, Marta
dc.contributor.author	Castells-Gil, Javier
dc.contributor.author	Almora-Barrios, Neyvis
dc.contributor.author	Navarro-Sánchez, José
dc.contributor.author	Escorcia-Ariza, Garin
dc.contributor.author	Mattera, Michele
dc.contributor.author	Arnold, Thomas
dc.contributor.author	Rawle, Jonathan
dc.contributor.author	Tatay Aguilar, Sergio
dc.contributor.author	Coronado Miralles, Eugenio
dc.contributor.author	Martí Gastaldo, Carlos
dc.date.accessioned	2019-01-18T15:20:05Z
dc.date.available	2019-01-18T15:20:05Z
dc.date.issued	2018
dc.identifier.citation	Rubio-Giménez, Víctor Galbiati, Marta Castells-Gil, Javier Almora-Barrios, Neyvis Navarro-Sánchez, José Escorcia-Ariza, Garin Mattera, Michele Arnold, Thomas Rawle, Jonathan Tatay Aguilar, Sergio Coronado Miralles, Eugenio Martí Gastaldo, Carlos 2018 Bottom‐Up Fabrication of Semiconductive Metal-Organic Framework Ultrathin Films Advanced Materials 30 10 1704291
dc.identifier.uri	http://hdl.handle.net/10550/68564
dc.description.abstract	Though generally considered insulating, recent progress on the discovery of conductive porous metal-organic frameworks (MOFs) offers new opportunities for their integration as electroactive components in electronic devices. Compared to classical semiconductors, these metal-organic hybrids combine the crystallinity of inorganic materials with easier chemical functionalization and processability. Still, future development depends on the ability to produce high-quality films with fine control over their orientation, crystallinity, homogeneity, and thickness. Here self-assembled monolayer substrate modification and bottom-up techniques are used to produce preferentially oriented, ultrathin, conductive films of Cu-CAT-1. The approach permits to fabricate and study the electrical response of MOF-based devices incorporating the thinnest MOF film reported thus far (10 nm thick).
dc.language.iso	eng
dc.relation.ispartof	Advanced Materials, 2018, vol. 30, num. 10, p. 1704291
dc.subject	Conductivitat elèctrica
dc.subject	Química organometàl·lica
dc.title	Bottom‐Up Fabrication of Semiconductive Metal-Organic Framework Ultrathin Films
dc.type	journal article	es_ES
dc.date.updated	2019-01-18T15:20:05Z
dc.identifier.doi	10.1002/adma.201704291
dc.identifier.idgrec	124431
dc.rights.accessRights	open access	es_ES