NAGIOS: RODERIC FUNCIONANDO

Photoluminescence Imaging and LBIC Characterization of Defects in mc-Si Solar Cells

Repositori DSpace/Manakin

IMPORTANT: Aquest repositori està en una versió antiga des del 3/12/2023. La nova instal.lació está en https://roderic.uv.es/

Photoluminescence Imaging and LBIC Characterization of Defects in mc-Si Solar Cells

dc.contributor.author	Sánchez Domínguez, Luis Alberto
dc.contributor.author	Moretón, A.
dc.contributor.author	Guada, M.
dc.contributor.author	Rodríguez-Conde, S.
dc.contributor.author	Martínez, O.
dc.contributor.author	González, M.A.
dc.contributor.author	Jiménez, J.
dc.date.accessioned	2019-05-22T13:22:05Z
dc.date.available	2019-05-22T13:22:05Z
dc.date.issued	2018
dc.identifier.citation	Sánchez Domínguez, Luis Alberto Moretón, A. Guada, M. Rodríguez-Conde, S. Martínez, O. González, M.A. Jiménez, J. 2018 Photoluminescence Imaging and LBIC Characterization of Defects in mc-Si Solar Cells Journal of Electronic Materials 47 9 5077 5082
dc.identifier.uri	https://hdl.handle.net/10550/70267
dc.description.abstract	Today's photovoltaic market is dominated by multicrystalline silicon (mc-Si) based solar cells with around 70% of worldwide production. In order to improve the quality of the Si material, a proper characterization of the electrical activity in mc-Si solar cells is essential. A full-wafer characterization technique such as photoluminescence imaging (PLi) provides a fast inspection of the wafer defects, though at the expense of the spatial resolution. On the other hand, a study of the defects at a microscopic scale can be achieved through the light-beam induced current technique. The combination of these macroscopic and microscopic resolution techniques allows a detailed study of the electrical activity of defects in mc-Si solar cells. In this work, upgraded metallurgical-grade Si solar cells are studied using these two techniques.
dc.language.iso	eng
dc.relation.ispartof	Journal of Electronic Materials, 2018, vol. 47, num. 9, p. 5077-5082
dc.subject	Ciència dels materials
dc.subject	Semiconductors
dc.title	Photoluminescence Imaging and LBIC Characterization of Defects in mc-Si Solar Cells
dc.type	journal article	es_ES
dc.date.updated	2019-05-22T13:22:05Z
dc.identifier.doi	10.1007/s11664-018-6381-8
dc.identifier.idgrec	131053
dc.rights.accessRights	open access	es_ES