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Topology driven g-factor tuning in type-II quantum dots

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Topology driven g-factor tuning in type-II quantum dots

dc.contributor.author	Llorens, J. M.
dc.contributor.author	Lopes-Oliveira, V.
dc.contributor.author	López-Richard, V.
dc.contributor.author	Cardozo de Oliveira, E. R.
dc.contributor.author	Wewiór, L.
dc.contributor.author	Ulloa, J. M.
dc.contributor.author	Teodoro, M. D.
dc.contributor.author	Marques, G. E.
dc.contributor.author	García Cristóbal, Alberto
dc.contributor.author	Hai, G.-Q.
dc.contributor.author	Alén, B.
dc.date.accessioned	2020-06-15T09:14:57Z
dc.date.available	2020-06-15T09:14:57Z
dc.date.issued	2019
dc.identifier.citation	Llorens, J. M. Lopes-Oliveira, V. López-Richard, V. Cardozo de Oliveira, E. R. Wewiór, L. Ulloa, J. M. Teodoro, M. D. Marques, G. E. García Cristóbal, Alberto Hai, G.-Q. Alén, B. 2019 Topology driven g-factor tuning in type-II quantum dots Physical Review D 11 044011-1 044011-15
dc.identifier.uri	https://hdl.handle.net/10550/74998
dc.description.abstract	We investigate how the voltage control of the exciton lateral dipole moment induces a transition from singly to doubly connected topology in type-II In As/Ga Asx Sb1−x quantum dots. The latter causes visible Aharonov-Bohm oscillations and a change of the exciton g factor, which are modulated by the applied bias. The results are explained in the frame of realistic →k⋅ →p and effective Hamiltonian models and could open a venue for new spin quantum memories beyond the In As/Ga As realm.
dc.language.iso	eng
dc.relation.ispartof	Physical Review D, 2019, vol. 11, p. 044011-1-044011-15
dc.subject	Semiconductors
dc.subject	Ciència dels materials
dc.title	Topology driven g-factor tuning in type-II quantum dots
dc.type	journal article	es_ES
dc.date.updated	2020-06-15T09:15:32Z
dc.identifier.doi	10.1103/PhysRevApplied.11.044011
dc.identifier.idgrec	139584
dc.rights.accessRights	open access	es_ES