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Numerical analysis of thermally induced optical nonlinearity in GaSe layered crystal

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Numerical analysis of thermally induced optical nonlinearity in GaSe layered crystal

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dc.contributor.author	Navarro, E.A.
dc.contributor.author	Hernández, María Ángeles
dc.contributor.author	Andrés, Miguel V.
dc.contributor.author	Segura García del Río, Alfredo
dc.contributor.author	Muñoz Sanjosé, Vicente
dc.date.accessioned	2022-04-27T16:42:26Z
dc.date.available	2022-04-27T16:42:26Z
dc.date.issued	1996
dc.identifier.citation	Navarro, E.A. Hernández, María Ángeles Andrés, Miguel V. Segura García del Río, Alfredo Muñoz Sanjosé, Vicente 1996 Numerical analysis of thermally induced optical nonlinearity in GaSe layered crystal IEE Proceedings-Optoelectronics 143 4 244 247
dc.identifier.uri	https://hdl.handle.net/10550/82439
dc.description.abstract	A numerical approach to studying thermally induced optical nonlinearity in semiconductors is presented. A transient finite difference algorithm is applied to solve the thermal diffusion equation coupled with the nonlinear absorbance-transmittance of Au/GaSe/Au samples with an applied electric field. The presented analysis can deal with any arbitrary axisymmetric dependence of the input power over the sample and external electric field, and provides information about the steady state and transitory effects in the transmittance.
dc.language.iso	eng
dc.relation.ispartof	IEE Proceedings-Optoelectronics, 1996, vol. 143, num. 4, p. 244-247
dc.subject	Òptica
dc.subject	Cristalls
dc.title	Numerical analysis of thermally induced optical nonlinearity in GaSe layered crystal
dc.type	journal article	es_ES
dc.date.updated	2022-04-27T16:42:26Z
dc.identifier.doi	10.1049/ip-opt:19960523
dc.identifier.idgrec	081074
dc.rights.accessRights	open access	es_ES