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Raman spectroscopy and photoluminescence of ZnTe thin films grown on GaAs

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Raman spectroscopy and photoluminescence of ZnTe thin films grown on GaAs

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dc.contributor.author Camacho, J.
dc.contributor.author Cantarero Sáez, Andrés
dc.contributor.author Hernández Calderón, I.
dc.contributor.author González, L.
dc.date.accessioned 2010-06-03T08:02:57Z
dc.date.available 2010-06-03T08:02:57Z
dc.date.issued 2002
dc.identifier.citation CAMACHO, J. ; CANTARERO, A. ; HERNÁNDEZ CALDERÓN, I. ; GONZÁLEZ, L. Raman spectroscopy and photoluminescence of ZnTe thin films grown on GaAs. En: Journal of Applied Physics, 2002, vol. 92, no. 10 en
dc.identifier.uri http://hdl.handle.net/10550/12860
dc.description.abstract We report resonant Raman scattering and photoluminescence (PL) measurements on two ZnTe thin films grown by molecular-beam epitaxy on GaAs substrates with thicknesses around 0.5 and 1.0 μm. The data have been obtained by using the different excitation energies of an Ar+ laser to distinguish Raman from PL and analyze resonant effects. The characteristic features of the low-temperature PL spectra are the light and heavy free exciton emissions, split due to the thermal strain effect, followed by several phonon replicas of these lines. Moreover, longitudinal and transversal polariton splittings of heavy excitons are clearly observed. Their reduced masses have been obtained from the exciton binding energies. Room and low-temperature Raman spectra show, besides the typical longitudinal optical (LO) multiphonon emissions, forbidden zone-center transverse optical (TO)+(n−1)LO phonon combinations, which yield an accurate value for the LO and TO phonon energies. The breakdown of the selection rules is attributed to surface faceting. en_US
dc.language.iso en en
dc.subject Zinc compounds ; II-VI semiconductors ; Raman spectra ; Photoluminescence ; Excitons ; Polaritons ; Semiconductor epitaxial layers en
dc.title Raman spectroscopy and photoluminescence of ZnTe thin films grown on GaAs en
dc.type journal article es_ES
dc.subject.unesco UNESCO::FÍSICA en
dc.identifier.doi 10.1063/1.1516267 en
dc.type.hasVersion VoR es_ES
dc.identifier.url http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000092000010006014000001&idtype=cvips&prog=normal&doi=10.1063/1.1516267 en

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