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High‐temperature behavior of impurities and dimensionality of the charge transport in unintentionally and tin‐doped indium selenide

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High‐temperature behavior of impurities and dimensionality of the charge transport in unintentionally and tin‐doped indium selenide

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dc.contributor.author Martínez Pastor, Juan Pascual
dc.contributor.author Segura García del Río, Alfredo
dc.contributor.author Chevy, A.
dc.date.accessioned 2010-06-08T10:32:13Z
dc.date.available 2010-06-08T10:32:13Z
dc.date.issued 1993
dc.identifier.citation MARTÍNEZ PASTOR, J. ; SEGURA, A. ; CHEVY, A. High‐temperature behavior of impurities and dimensionality of the charge transport in unintentionally and tin‐doped indium selenide. En: Journal of Applied Physics, 1993, vol. 74, no. 5 en
dc.identifier.uri http://hdl.handle.net/10550/12903
dc.description.abstract A systematic study of the electron transport and shallow impurity distribution in indium selenide above room temperature or after an annealing process is reported by means of far‐infrared‐absorption and Hall‐effect measurements. Evidences are found for the existence of a large concentration of deep levels (1012–1013 cm−2), related to impurities adsorbed to stacking faults in this material. Above room temperature impurities can migrate from those defect zones and then become shallow in the bulk. The subsequent large increase of 3D electrons can change the dimensionality of the electron transport, which in most cases was 2D. The temperature dependence of the resistivity parallel to the c axis can be explained by the observed increase of the 3D electron concentration, whose motion across the layers is limited by stacking‐fault‐related potential barriers. The observed macroscopic resistivity is thus determined by tunneling through those barriers. en_US
dc.language.iso en en
dc.subject Indium Selenides ; Tin Additions ; Impurities ; Annealing ; Electric Conductivity ; Infrared Spectra ; Hall Effect ; Deep Energy Levels ; Temperature Dependence ; Doped Materials en
dc.title High‐temperature behavior of impurities and dimensionality of the charge transport in unintentionally and tin‐doped indium selenide en
dc.type journal article es_ES
dc.subject.unesco UNESCO::FÍSICA en
dc.identifier.doi 10.1063/1.354597 en
dc.type.hasVersion VoR es_ES
dc.identifier.url http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000074000005003231000001&idtype=cvips&prog=normal&doi=10.1063/1.354597 en

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