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Positron lifetime measurements on neutron‐irradiated InP crystals

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Positron lifetime measurements on neutron‐irradiated InP crystals

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Navarro, F. J.; Damonte, L. C.; Marí, B.; Ferrero Calabuig, José Lorenzo

Aquest document és un/a article, creat/da en: 1996

Este documento está disponible también en : http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000079000012009043000001&idtype=cvips&prog=normal&doi=10.1063/1.362637

Neutron‐irradiated InP single crystals have been investigated by positron‐lifetime measurements. The samples were irradiated with thermal neutrons at different fluences yielding concentrations for Sn‐transmuted atoms between 2×1015 and 2×1018 cm−3. The lifetime spectra have been analyzed into one exponential decay component. The mean lifetimes show a monotonous increase with the irradiation dose from 246 to 282 ps. The increase in the lifetime has been associated to a defect containing an Indium vacancy. Thermal annealing at 550 °C reduces the lifetime until values closed to those obtained for the as‐grown and conventionally doped InP crystals.

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