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Recombination processes in unintentionally doped GaTe single crystals

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Recombination processes in unintentionally doped GaTe single crystals

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dc.contributor.author	Zubiaga, A.
dc.contributor.author	García, J. A.
dc.contributor.author	Plazaola, F.
dc.contributor.author	Muñoz Sanjosé, Vicente
dc.contributor.author	Martínez Tomás, María del Carmen
dc.date.accessioned	2010-06-14T09:33:36Z
dc.date.available	2010-06-14T09:33:36Z
dc.date.issued	2002
dc.identifier.citation	ZUBIAGA, A. ; GARCÍA, J.A. ; PLAZAOLA, F. ; MUÑOZ SANJOSÉ, V. ; MARTÍNEZ TOMÁS, M.C. Recombination processes in unintentionally doped GaTe single crystals. En: Journal of Applied Physics, 2002, vol. 92, no. 12	en
dc.identifier.uri	http://hdl.handle.net/10550/12968
dc.description.abstract	Emission spectra of GaTe single crystals in the range of 1.90–1.38 eV have been analyzed at different temperatures and excitation intensities by photoluminescence, photoluminescence excitation, and selective photoluminescence. A decrease in band gap energy with an increase in temperature was obtained from the redshift of the free exciton recombination peak. The energy of longitudinal optical phonons was found to be 14±1 meV. A value of 1.796±0.001 eV for the band gap at 10 K was determined, and the bound exciton energy was found to be 18±0.3 meV. The activation energy of the thermal quenching of the main recombination peaks and of the ones relating to the ionization energy of impurities and defects was analyzed. The results obtained show the existence of two acceptor levels with ionization energies of 110±5 and 150±5 meV, respectively, and one donor level with an ionization energy of 75±5 meV. The study of chemical composition by inductively coupled plasma-optical emission spectroscopy and x-ray energy dispersion spectroscopy shows the existence of Na, Li, and Si. Sodium and lithium impurities could be associated with acceptor levels at gallium substitutional sites, and silicon ones with a donor level at Ga sites, whose vacancies can also be involved in these electronic levels.	en_US
dc.language.iso	en	en
dc.subject	Gallium compounds ; III-VI semiconductors ; Photoluminescence ; Impurity states ; Cefect states ; Electron-phonon interactions ; Phonon-exciton interactions ; Excitons ; Red shift ; Radiation quenching	en
dc.title	Recombination processes in unintentionally doped GaTe single crystals	en
dc.type	journal article	es_ES
dc.subject.unesco	UNESCO::FÍSICA	en
dc.identifier.doi	10.1063/1.1523144	en
dc.identifier.idgrec	002414	en
dc.type.hasVersion	VoR	es_ES
dc.identifier.url	http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000092000012007330000001&idtype=cvips&prog=normal&doi=10.1063/1.1523144	en