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Optical and photovoltaic properties of indium selenide thin films prepared by van der Waals epitaxy

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Optical and photovoltaic properties of indium selenide thin films prepared by van der Waals epitaxy

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dc.contributor.author	Sánchez Royo, Juan Francisco
dc.contributor.author	Segura García del Río, Alfredo
dc.contributor.author	Lang, O.
dc.contributor.author	Schaar, E.
dc.contributor.author	Pettenkofer, C.
dc.contributor.author	Jaegermann, W.
dc.contributor.author	Roa, L.
dc.contributor.author	Chevy, A.
dc.date.accessioned	2010-06-21T10:28:05Z
dc.date.available	2010-06-21T10:28:05Z
dc.date.issued	2001
dc.identifier.citation	SANCHEZ ROYO, J.F. ; SEGURA, A. ; LANG, O. ; SCHAAR, E. ; PETTENKOFER, C. ; JAEGERMANN, W. ; ROA, L. ; CHEVY, A. Optical and photovoltaic properties of indium selenide thin films prepared by van der Waals epitaxy. En: Journal of Applied Physics, 2001, vol. 90, no. 6	en
dc.identifier.uri	http://hdl.handle.net/10550/13029
dc.description.abstract	Indium selenide thin films have been grown on p-type gallium selenide single crystal substrates by van der Waals epitaxy. The use of two crucibles in the growth process has resulted in indium selenide films with physical properties closer to these of bulk indium selenide than those prepared by other techniques. The optical properties of the films have been studied by electroabsorption measurements. The band gap and its temperature dependence are very close to those of indium selenide single crystals. The width of the fundamental transition, even if larger than that of the pure single crystal material, decreases monotonously with temperature. Exciton peaks are not observed even at low temperature, which reveals that these layers still contain a large defect concentration. The current–voltage characteristic of indium selenide thin film devices was measured under simulated AM2 conditions. The solar conversion efficiency of these devices is lower than 0.6%. The high concentration of defects reduces the diffusion length of minority carriers down to values round to 0.2 μm.	en_US
dc.language.iso	en	en
dc.subject	Indium compounds ; III-VI semiconductors ; Semiconductor epitaxial layers ; Electroabsorption ; Excitons ; Minority carriers ; Carrier lifetime	en
dc.title	Optical and photovoltaic properties of indium selenide thin films prepared by van der Waals epitaxy	en
dc.type	journal article	es_ES
dc.subject.unesco	UNESCO::FÍSICA	en
dc.identifier.doi	10.1063/1.1389479	en
dc.type.hasVersion	VoR	es_ES
dc.identifier.url	http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000090000006002818000001&idtype=cvips&prog=normal&doi=10.1063/1.1389479	en