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Raman scattering and infrared reflectivity in [(InP)5(In0.49Ga0.51As)8]30 superlattices

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Raman scattering and infrared reflectivity in [(InP)5(In0.49Ga0.51As)8]30 superlattices

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dc.contributor.author	Popovic, Zoran V.
dc.contributor.author	Cantarero Sáez, Andrés
dc.contributor.author	Camacho, J.
dc.contributor.author	Milutinovi, A.
dc.contributor.author	Latinovi, O.
dc.contributor.author	González, L.
dc.date.accessioned	2010-06-21T10:28:40Z
dc.date.available	2010-06-21T10:28:40Z
dc.date.issued	2000
dc.identifier.citation	POPOVIC, Z.V. ; CANTARERO, A. ; CAMACHO, J. ; MILUTINOVI, A. ; LATINOVI, O. ; GONZÁLEZ, L. Raman scattering and infrared reflectivity in [(InP)5(In0.49Ga0.51As)8]30 superlattices. En: Journal of Applied Physics, 2000, vol. 88, no. 11	en
dc.identifier.uri	http://hdl.handle.net/10550/13030
dc.description.abstract	We have measured far-infrared and infrared reflectivity as well as Raman scattering in an [(InP)5(In0.49Ga0.51As)8]30 superlattice grown by molecular beam epitaxy. A numerical model for calculating the reflectivity coefficient for complex systems which includes superlattice, buffer layer, and substrate has been developed. The far-infrared reflectivity spectra consists of the superlattice confined and interface modes as well as the modes from the buffer layer (In0.49Ga0.51As) and the substrate (InP). In the infrared spectral range above 1000 cm−1 we observe only interference fringes from the buffer layer. A good agreement between calculated and experimental spectra is achieved. The folded longitudinal acoustic phonon doublet appears at about 39 cm−1 in the Raman scattering spectra. The frequency agrees well with a continuum model calculation. In the optical phonon spectral region we observe confined modes corresponding to both constituents. The modes representing vibrations of atoms at both interfaces: InP/InGaAs (230 cm−1 mode) and InGaAs/InP (240 and 260 cm−1 modes) have also been observed. The geometrical parameters of the sample, obtained from the fitting of the reflectivity data, agree well to the values of the layer thickness obtained by double crystal x-ray diffraction.	en_US
dc.language.iso	es	en
dc.subject	Indium compounds ; Gallium arsenide ; III-V semiconductors ; Semiconductor superlattices ; Raman spectra ; Infrared spectra ; Reflectivity ; Interface phonons ; Semiconductor epitaxial layers	en
dc.title	Raman scattering and infrared reflectivity in [(InP)5(In0.49Ga0.51As)8]30 superlattices	en
dc.type	journal article	es_ES
dc.subject.unesco	UNESCO::FÍSICA	en
dc.identifier.doi	10.1063/1.1287133	en
dc.type.hasVersion	VoR	es_ES
dc.identifier.url	http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000088000011006382000001&idtype=cvips&prog=normal&doi=10.1063/1.1287133	en