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Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition

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Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition

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dc.contributor.author	Martínez Criado, Gema
dc.contributor.author	Cros Stotter, Ana
dc.contributor.author	Cantarero Sáez, Andrés
dc.contributor.author	Dimitrov, R.
dc.contributor.author	Ambacher, O.
dc.contributor.author	Stutzmann, M.
dc.date.accessioned	2010-06-21T10:29:16Z
dc.date.available	2010-06-21T10:29:16Z
dc.date.issued	2000
dc.identifier.citation	MARTÍNEZ CRIADO, G. ; CROS, A. ; CANTARERO, A. ; DIMITROV, R. ; AMBACHER, O. ; STUTZMANN, M. Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition. En: Journal of Applied Physics, 2000, vol. 88, no. 6	en
dc.identifier.uri	http://hdl.handle.net/10550/13031
dc.description.abstract	Scanning electron microscopy, micro-Raman, and photoluminescence (PL) measurements are reported for Mg-doped GaN films grown on (0001) sapphire substrates by low-pressure metalorganic chemical vapor phase deposition. The surface morphology, structural, and optical properties of GaN samples with Mg concentrations ranging from 1019 to 1021 cm−3 have been studied. In the scanning micrographs large triangular pyramids are observed, probably due to stacking fault formation and three-dimensional growth. The density and size of these structures increase with the amount of magnesium incorporated in the samples. In the photoluminescence spectra, intense lines were found at 3.36 and 3.31 eV on the triangular regions, where the presence of cubic inclusions was confirmed by micro-Raman measurements. The excitation dependence and temperature behavior of these lines enable us to identify their excitonic nature. From our study we conclude that the interface region between these defects and the surrounding wurtzite GaN could be responsible for PL lines.	en_US
dc.language.iso	en	en
dc.subject	Gallium compounds ; III-V semiconductors ; Wide band gap semiconductors ; Magnesium ; Semiconductor thin films ; MOCVD coatings ; Scanning electron microscopy ; Raman spectra ; Photoluminescence ; Surface composition ; Surface topography ; Stacking faults ; Inclusions ; Excitons	en
dc.title	Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition	en
dc.type	journal article	es_ES
dc.subject.unesco	UNESCO::FÍSICA	en
dc.identifier.doi	10.1063/1.1289794	en
dc.type.hasVersion	VoR	es_ES
dc.identifier.url	http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000088000006003470000001&idtype=cvips&prog=normal&doi=10.1063/1.1289794	en