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Thin film growth and band lineup of In2O3 on the layered semiconductor InSe

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Thin film growth and band lineup of In2O3 on the layered semiconductor InSe

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Lang, O.; Pettenkofer, C.; Sánchez Royo, Juan Francisco; Segura García del Río, Alfredo; Klein, A.; Jaegermann, W.

Aquest document és un/a article, creat/da en: 1999

Este documento está disponible también en : http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000086000010005687000001&idtype=cvips&prog=normal&doi=10.1063/1.371579

Thin films of the transparent conducting oxide In2O3 have been prepared in ultrahigh vacuum by reactive evaporation of indium. X-ray diffraction, optical, and electrical measurements were used to characterize properties of films deposited on transparent insulating mica substrates under variation of the oxygen pressure. Photoelectron spectroscopy was used to investigate in situ the interface formation between In2O3 and the layered semiconductor InSe. For thick In2O3 films a work function of φ = 4.3 eV and a surface Fermi level position of EF−EV = 3.0 eV is determined, giving an ionization potential IP = 7.3 eV and an electron affinity χ = 3.7 eV. The interface exhibits a type I band alignment with ΔEV = 2.05 eV, ΔEC = 0.29 eV, and an interface dipole of δ = −0.55 eV.

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