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dc.contributor.author | Choi, S. G. | |
dc.contributor.author | Levi, D. H. | |
dc.contributor.author | Martínez Tomás, María del Carmen | |
dc.contributor.author | Muñoz Sanjosé, Vicente | |
dc.date.accessioned | 2010-04-28T09:22:46Z | |
dc.date.available | 2010-04-28T09:22:46Z | |
dc.date.issued | 2009 | |
dc.identifier.citation | CHOI, S. G. ; LEVI, D. H. ; MARTINEZ TOMAS, C. ;MUÑOZ SANJOSÉ, V. Above-bandgap ordinary optical properties of GaSe single crystal. En: Journal of Applied Physics, 2009, vol. 106 | en |
dc.identifier.uri | http://hdl.handle.net/10550/2296 | |
dc.description.abstract | We report above-bandgap ordinary optical properties of ε-phase GaSe single crystal. Reference-quality pseudodielectric function 〈ε(E)〉 = 〈ε1(E)〉+i〈ε2(E)〉 and pseudorefractive index 〈N(E)〉 = 〈n(E)〉+i〈k(E)〉 spectra were measured by spectroscopic ellipsometry from 0.73 to 6.45 eV at room temperature for the light polarization perpendicular to the optic axis (math⊥math). The 〈ε〉 spectrum exhibited several interband-transition critical-point structures. Analysis of second-energy derivatives calculated numerically from the measured data yielded the critical-point energy values. | en_US |
dc.language.iso | es | en |
dc.subject | Critical points ; Dielectric function ; Ellipsometry ; Energy gap ; Gallium compounds ; III-VI semiconductors ; Refractive index | en |
dc.title | Above-bandgap ordinary optical properties of GaSe single crystal | en |
dc.type | journal article | es_ES |
dc.subject.unesco | UNESCO::FÍSICA | en |
dc.identifier.doi | 10.1063/1.3211967 | en |
dc.type.hasVersion | VoR | es_ES |
dc.identifier.url | http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000106000005053517000001&idtype=cvips&prog=normal&doi=10.1063/1.3211967 | en |