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Polarized recombination of acoustically transported carriers in GaAs nanowires
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Polarized recombination of acoustically transported carriers in GaAs nanowires
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| Möller, Michael; Hernández-Mínguez, Alberto; Breuer, Steffen; Pfüller, Carsten; Brandt, Oliver; Morais de Lima, Mauricio, Jr.; Cantarero Sáez, Andrés; Geelhaar, Lutz; Riechert, Henning; Santos, P.V. | |||
| Aquest document és un/a article, creat/da en: 2012 | |||
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Este documento está disponible también en : 10.1186/1556-276X-7-247 |
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| The oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport photoexcited electrons and holes in GaAs nanowires deposited on a SAW delay line on a LiNbO3 crystal. The carriers generated in the nanowire by a focused light spot are acoustically transferred to a second location where they recombine. We show that the recombination of the transported carriers occurs in a zinc blende section on top of the predominant wurtzite nanowire. This allows contactless control of the linear polarized emission by SAWs which is governed by the crystal structure. Additional polarization-resolved photoluminescence measurements were performed to investigate spin conservation during transport. | |||
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