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Acoustic manipulation of electron-hole pairs in GaAs at room temperature

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dc.contributor.author	Morais de Lima, Mauricio, Jr.
dc.contributor.author	Hey, R.
dc.contributor.author	Stotz, J.A.H.
dc.contributor.author	Santos, P.V.
dc.date.accessioned	2013-11-27T13:05:36Z
dc.date.available	2013-11-27T13:05:36Z
dc.date.issued	2004
dc.identifier.citation	Morais de Lima, Mauricio, Jr. Hey, R. Stotz, J.A.H. Santos, P.V. 2004 Acoustic manipulation of electron-hole pairs in GaAs at room temperature Applied Physics Letters 84 14 2569
dc.identifier.uri	http://hdl.handle.net/10550/31449
dc.description.abstract	We demonstrate the optically detected long-range (>100 µm) ambipolar transport of photogenerated electrons and holes at room temperature by surface acoustic waves (SAWs) in (In,Ga)As-based quantum well structures coupled to an optical microcavity. We also show the control of the propagation direction of the carriers by a switch composed of orthogonal SAWbeams, which can be used as a basic control gate for information processing based on ambipolar transport.
dc.relation.ispartof	Applied Physics Letters, 2004, vol. 84, num. 14, p. 2569
dc.subject	Enginyeria acústica
dc.subject	Ciència dels materials
dc.title	Acoustic manipulation of electron-hole pairs in GaAs at room temperature
dc.type	journal article	es_ES
dc.date.updated	2013-11-27T13:05:36Z
dc.identifier.doi	10.1063/1.1695636
dc.identifier.idgrec	037341
dc.rights.accessRights	open access	es_ES
dc.identifier.url	10.1063/1.1695636