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ESR observations of paramagnetic centers in intrinsic hydrogenated microcrystalline silicon

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ESR observations of paramagnetic centers in intrinsic hydrogenated microcrystalline silicon

dc.contributor.author	Morais de Lima, Mauricio, Jr.
dc.contributor.author	Taylor, P.C.
dc.contributor.author	Morison, S.
dc.contributor.author	LeGeune, A.
dc.contributor.author	Marques, F.C.
dc.date.accessioned	2013-11-27T13:33:04Z
dc.date.available	2013-11-27T13:33:04Z
dc.date.issued	2002
dc.identifier.citation	Morais de Lima, Mauricio, Jr. Taylor, P.C. Morison, S. LeGeune, A. Marques, F.C. 2002 ESR observations of paramagnetic centers in intrinsic hydrogenated microcrystalline silicon Physical Review B 65 23 235324
dc.identifier.uri	http://hdl.handle.net/10550/31450
dc.description.abstract	Paramagnetic centers in hydrogenated microcrystalline silicon, µc-Si:H have been studied using dark and light-induced electron-spin resonance (ESR). In dark ESR measurements only one center is observed. The g values obtained empirically from powder-pattern line-shape simulations are g=2.0096 and g'=2.0031. We suggest that this center may be due to defects in the crystalline phase. During illumination at low temperatures, an additional ESR signal appears. This signal is best described by two powder patterns indicating the presence of two centers. One center is asymmetric (gi=1.999, g'=1.996), while the other is characterized by large, unresolved broadening such that unique g values cannot be obtained. The average g value for this center is 1.998. The light-induced signal, which we interpret as coming from carriers trapped in the band tails at the crystalline grain boundaries, remains for at least several minutes after the light is turned off. Although the time scales of the decay curves are very different for two samples prepared by different techniques, both decays can be fitted using the assumption of recombination due to distant pairs of electrons and holes trapped in localized band-tail states.
dc.relation.ispartof	Physical Review B, 2002, vol. 65, num. 23, p. 235324
dc.subject	Ciència dels materials
dc.title	ESR observations of paramagnetic centers in intrinsic hydrogenated microcrystalline silicon
dc.type	journal article	es_ES
dc.date.updated	2013-11-27T13:33:04Z
dc.identifier.doi	10.1103/PhysRevB.65.235324
dc.identifier.idgrec	037348
dc.rights.accessRights	open access	es_ES
dc.identifier.url	10.1103/PhysRevB.65.235324