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Unraveling the strain state of GaN down to single nanowires

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Unraveling the strain state of GaN down to single nanowires

dc.contributor.author	Auzelle, Thomas
dc.contributor.author	Biquard, Xavier
dc.contributor.author	Bellet-Amalric, Edith
dc.contributor.author	Fang, Zhihua
dc.contributor.author	Roussel, Hervé
dc.contributor.author	Cros Stotter, Ana
dc.contributor.author	Daudin, Bruno
dc.date.accessioned	2017-03-23T08:24:45Z
dc.date.available	2017-03-23T08:24:45Z
dc.date.issued	2016
dc.identifier.citation	Auzelle, Thomas Biquard, Xavier Bellet-Amalric, Edith Fang, Zhihua Roussel, Hervé Cros Stotter, Ana Daudin, Bruno 2016 Unraveling the strain state of GaN down to single nanowires Journal of Applied Physics 120 22 225701
dc.identifier.uri	http://hdl.handle.net/10550/57776
dc.description.abstract	GaN nanowires (NWs) grown by molecular beam epitaxy are usually assumed free of strain in spite of different individual luminescence signatures. To ascertain this usual assumption, the c/a of a GaNNW assembly has been characterized using both X-ray diffraction and Raman spectroscopy, with scaling the measurement down to the single NW. Free-standing single NWs have been observed free of strain defined as [c/a-(c/a)o]/(c/a)o within the experimental accuracy mounting to 1.25 × 10-4. However, in the general case, a significant portion of the NWs is coalesced, generating an average tensile strain that can be partly released by detaching the NWs from their substrates. It is concluded that at the scale of the single NW, the free surface and the residual doping do not generate a significant strain and only coalescence does.
dc.language.iso	eng
dc.relation.ispartof	Journal of Applied Physics, 2016, vol. 120, num. 22, p. 225701
dc.subject	Espectroscòpia Raman
dc.subject	Ciència dels materials
dc.title	Unraveling the strain state of GaN down to single nanowires
dc.type	journal article	es_ES
dc.date.updated	2017-03-23T08:24:46Z
dc.identifier.doi	10.1063/1.4971967
dc.identifier.idgrec	116584
dc.rights.accessRights	open access	es_ES