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Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: the effect of stacking faults in the reduction of the internal electric field

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Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: the effect of stacking faults in the reduction of the internal electric field

dc.contributor.author	Budagosky Marcilla, Jorge Alejandro
dc.contributor.author	Garro Martínez, Núria
dc.contributor.author	Cros Stotter, Ana
dc.contributor.author	García Cristóbal, Alberto
dc.contributor.author	Founta, S.
dc.contributor.author	Daudin, Bruno
dc.date.accessioned	2017-03-23T15:22:47Z
dc.date.available	2017-03-23T15:22:47Z
dc.date.issued	2016
dc.identifier.citation	Budagosky Marcilla, Jorge Alejandro Garro Martínez, Núria Cros Stotter, Ana García Cristóbal, Alberto Founta, S. Daudin, Bruno 2016 Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: the effect of stacking faults in the reduction of the internal electric field Materials Science in Semiconductor Processing 49 76 80
dc.identifier.uri	http://hdl.handle.net/10550/57847
dc.description.abstract	The optical emission of non-polar GaN/AlN quantum dots has been investigated. The presence of stacking faults inside these quantum dots is evidenced in the dependence of the photoluminescence with temperature and excitation power. A theoretical model for the electronic structure and optical properties of non-polar quantum dots, taking into account their realistic shapes, is presented which predicts a substantial reduction of the internal electric field but a persisting quantum confined Stark effect, comparable to that of polar GaN/AlN quantum dots. Modeling the effect of a 3 monolayer stacking fault inside the quantum dot, which acts as zinc-blende inclusion into the wurtzite matrix, results in an additional 30% reduction of the internal electric field and gives a better account of the observed optical features.
dc.language.iso	eng
dc.relation.ispartof	Materials Science in Semiconductor Processing, 2016, vol. 49, p. 76-80
dc.subject	Ciència dels materials
dc.subject	Cristalls
dc.title	Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: the effect of stacking faults in the reduction of the internal electric field
dc.type	journal article	es_ES
dc.date.updated	2017-03-23T15:22:47Z
dc.identifier.doi	10.1016/j.mssp.2016.03.022
dc.identifier.idgrec	116582
dc.rights.accessRights	open access	es_ES