NAGIOS: RODERIC FUNCIONANDO

Direct assessment of p-n junctions in single GaN nanowires by Kelvin probe force microscopy

Repositori DSpace/Manakin

IMPORTANT: Aquest repositori està en una versió antiga des del 3/12/2023. La nova instal.lació está en https://roderic.uv.es/

Direct assessment of p-n junctions in single GaN nanowires by Kelvin probe force microscopy

dc.contributor.author	Minj, Albert
dc.contributor.author	Cros Stotter, Ana
dc.contributor.author	Auzelle, Thomas
dc.contributor.author	Pernot, Julien
dc.contributor.author	Daudin, Bruno
dc.date.accessioned	2017-03-23T15:42:59Z
dc.date.available	2017-03-23T15:42:59Z
dc.date.issued	2016
dc.identifier.citation	Minj, Albert Cros Stotter, Ana Auzelle, Thomas Pernot, Julien Daudin, Bruno 2016 Direct assessment of p-n junctions in single GaN nanowires by Kelvin probe force microscopy Nanotechnology 27 38 385202
dc.identifier.uri	http://hdl.handle.net/10550/57848
dc.description.abstract	Making use of Kelvin probe force microscopy, in dark and under ultraviolet illumination, we study the characteristics of p-n junctions formed along the axis of self-organized GaN nanowires (NWs). We map the contact potential difference of the single NW p-n junctions to locate the space charge region and directly measure the depletion width and the junction voltage. Simulations indicate a shrinkage of the built-in potential for NWs with small diameter due to surface band bending, in qualitative agreement with the measurements. The photovoltage of the NW/substrate contact is studied by analysing the response of NW segments with p- and n-type doping under illumination. Our results show that the shifts of the Fermi levels, and not the changes in surface band bending, are the most important effects under above band-gap illumination. The quantitative electrical information obtained here is important for the use of NW p-n junctions as photovoltaic or rectifying devices at the nanoscale, and is especially relevant since the technique does not require the formation of ohmic contacts to the NW junction.
dc.language.iso	eng
dc.relation.ispartof	Nanotechnology, 2016, vol. 27, num. 38, p. 385202
dc.subject	Nanotecnologia
dc.subject	Ciència dels materials
dc.title	Direct assessment of p-n junctions in single GaN nanowires by Kelvin probe force microscopy
dc.type	journal article	es_ES
dc.date.updated	2017-03-23T15:42:59Z
dc.identifier.doi	10.1088/0957-4484/27/38/385202
dc.identifier.idgrec	116583
dc.rights.accessRights	open access	es_ES