NAGIOS: RODERIC FUNCIONANDO

Charge Transport in Trap-Sensitized Infrared PbS Quantum-Dot-Based Photoconductors: Pros and Cons

Repositori DSpace/Manakin

IMPORTANT: Aquest repositori està en una versió antiga des del 3/12/2023. La nova instal.lació está en https://roderic.uv.es/

Charge Transport in Trap-Sensitized Infrared PbS Quantum-Dot-Based Photoconductors: Pros and Cons

dc.contributor.author	Maulu, Alberto
dc.contributor.author	Navarro-Arenas, Juan
dc.contributor.author	Rodríguez-Cantó, Pedro J.
dc.contributor.author	Sánchez Royo, Juan Francisco
dc.contributor.author	Abargues López, Rafael
dc.contributor.author	Suárez, Isaac
dc.contributor.author	Martínez Pastor, Juan Pascual
dc.date.accessioned	2018-09-07T14:08:48Z
dc.date.available	2018-09-07T14:08:48Z
dc.date.issued	2018
dc.identifier.citation	Maulu, Alberto Navarro-Arenas, Juan Rodríguez-Cantó, Pedro J. Sánchez Royo, Juan Francisco Abargues, Rafael Suárez, Isaac Martínez Pastor, Juan Pascual 2018 Charge Transport in Trap-Sensitized Infrared PbS Quantum-Dot-Based Photoconductors: Pros and Cons Nanomaterials 8 9 677-1 677-18
dc.identifier.uri	http://hdl.handle.net/10550/67433
dc.description.abstract	Control of quantum-dot (QD) surface chemistry offers a direct approach for the tuning of charge-carrier dynamics in photoconductors based on strongly coupled QD solids. We investigate the effects of altering the surface chemistry of PbS QDs in such QD solids via ligand exchange using 3-mercaptopropionic acid (MPA) and tetrabutylammonium iodide (TBAI). The roll-to-roll compatible doctor-blade technique was used for the fabrication of the QD solid films as the photoactive component in photoconductors and field-effect phototransistors. The ligand exchange of the QD solid film with MPA yields superior device performance with higher photosensitivity and detectivity, which is due to less dark current and lower noise level as compared to ligand exchange with TBAI. In both cases, the mechanism responsible for photoconductivity is related to trap sensitization of the QD solid, in which traps are responsible of high photoconductive gain values, but slow response times under very low incident optical power (<1 pW). At medium-high incident optical powers (>100 pW), where traps are filled, both MPA- and TBAI-treated photodevices exhibit similar behavior, characterized by lower responsivity and faster response time, as limited by the mobility in the QD solid.
dc.language.iso	eng
dc.relation.ispartof	Nanomaterials, 2018, vol. 8, num. 9, p. 677-1-677-18
dc.subject	Nanotecnologia
dc.subject	Ciència dels materials
dc.title	Charge Transport in Trap-Sensitized Infrared PbS Quantum-Dot-Based Photoconductors: Pros and Cons
dc.type	journal article	es_ES
dc.date.updated	2018-09-07T14:08:49Z
dc.identifier.doi	10.3390/nano8090677
dc.identifier.idgrec	126796
dc.rights.accessRights	open access	es_ES