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Elemental distribution and structural characterization of GaN/InGaN core-shell single nanowires by hard X-ray synchrotron nanoprobes

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Elemental distribution and structural characterization of GaN/InGaN core-shell single nanowires by hard X-ray synchrotron nanoprobes

dc.contributor.author	Secco, Eleonora
dc.contributor.author	Mengistu, Heruy Taddese
dc.contributor.author	Segura-Ruiz, Jaime
dc.contributor.author	Martínez Criado, Gema
dc.contributor.author	García Cristóbal, Alberto
dc.contributor.author	Cantarero Sáez, Andrés
dc.contributor.author	Foltynski, Bartosz
dc.contributor.author	Behmenburg, Hannes
dc.contributor.author	Giesen, Christoph
dc.contributor.author	Heuken, Michael
dc.contributor.author	Garro Martínez, Núria
dc.date.accessioned	2020-06-17T07:21:32Z
dc.date.available	2020-06-17T07:21:32Z
dc.date.issued	2019
dc.identifier.citation	Secco, Eleonora Mengistu, Heruy Taddese Segura-Ruiz, Jaime Martínez Criado, Gema García Cristóbal, Alberto Cantarero Sáez, Andrés Foltynski, Bartosz Behmenburg, Hannes Giesen, Christoph Heuken, Michael Garro Martínez, Núria 2019 Elemental distribution and structural characterization of GaN/InGaN core-shell single nanowires by hard X-ray synchrotron nanoprobes Nanomaterials 9 691
dc.identifier.uri	https://hdl.handle.net/10550/75083
dc.description.abstract	Improvements in the spatial resolution of synchrotron-based X-ray probes have reached the nano-scale and they, nowadays, constitute a powerful platform for the study of semiconductor nanostructures and nanodevices that provides high sensitivity without destroying the material. Three complementary hard X-ray synchrotron techniques at the nanoscale have been applied to the study of individual nanowires (NWs) containing non-polar GaN/InGaN multi-quantum-wells. The trace elemental sensitivity of X-ray fluorescence allows one to determine the In concentration of the quantum wells and their inhomogeneities along the NW. It is also possible to rule out any contamination from the gold nanoparticle catalyst employed during the NW growth. X-ray diffraction and X-ray absorption near edge-structure probe long- and short-range order, respectively, and lead us to the conclusion that while the GaN core and barriers are fully relaxed, there is an induced strain in InGaN layers corresponding to a perfect lattice matching with the GaN core. The photoluminescence spectrum of non-polar InGaN quntum wells is affected by strain and the inhomogeneous alloy distribution but still exhibits a reasonable 20% relative internal quantum efficiency.
dc.language.iso	eng
dc.relation.ispartof	Nanomaterials, 2019, vol. 9, p. 691
dc.subject	Materials nanoestructurats
dc.subject	Nanotecnologia
dc.title	Elemental distribution and structural characterization of GaN/InGaN core-shell single nanowires by hard X-ray synchrotron nanoprobes
dc.type	journal article	es_ES
dc.date.updated	2020-06-17T07:22:40Z
dc.identifier.doi	10.3390/nano9050691
dc.identifier.idgrec	139323
dc.rights.accessRights	open access	es_ES