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Phosphomolybdic acid as an efficient hole injection material in perovskite optoelectronic devices

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Phosphomolybdic acid as an efficient hole injection material in perovskite optoelectronic devices

dc.contributor.author	Hamidabadi, V. Fallah
dc.contributor.author	Momblona Rincón, María Cristina
dc.contributor.author	Pérez-del-Rey, Daniel
dc.contributor.author	Bahari, Ali
dc.contributor.author	Sessolo, Michele
dc.contributor.author	Bolink, Henk
dc.date.accessioned	2020-06-19T08:31:08Z
dc.date.available	2020-06-19T08:31:08Z
dc.date.issued	2019
dc.identifier.citation	Hamidabadi, V. Fallah Momblona Rincón, María Cristina Pérez-del-Rey, Daniel Bahari, Ali Sessolo, Michele Bolink, Henk 2019 Phosphomolybdic acid as an efficient hole injection material in perovskite optoelectronic devices Dalton Transactions 48 30 34
dc.identifier.uri	https://hdl.handle.net/10550/75138
dc.description.abstract	Efficient perovskite devices consist in a perovskite film sandwiched in between charge selective layers, in order to avoid non-radiative recombination. A common metal oxide used as p-type or hole transport layer is molybdenum oxide. MoO3 is of particular interest for its very large work function, which allows it to be used both as an interfacial charge transfer material as well as a dopant for organic semiconductors. However, high quality and high work function MoO3 is typically thermally evaporated in vacuum. An alternative solution-processable high work function material is phosphomolybdic acid (PMA), which is stable, commercially available and environmentally friendly. In this communication, we show the first application of PMA in efficient vacuum processed perovskite devices. We found that the direct growth of perovskite films onto PMA lead to strong charge carrier recombination, hindering the solar cell photovoltage. By using an energetically suitable selective transport layer placed in between PMA and the perovskite film, solar cells with efficiency > 13% as well as LEDs with promising quantum efficiency can be obtained.
dc.language.iso	eng
dc.relation.ispartof	Dalton Transactions, 2019, vol. 48, p. 30-34
dc.subject	Cèl·lules fotoelèctriques
dc.subject	Materials
dc.title	Phosphomolybdic acid as an efficient hole injection material in perovskite optoelectronic devices
dc.type	journal article	es_ES
dc.date.updated	2020-06-19T08:31:09Z
dc.identifier.doi	10.1039/C8DT03680B
dc.identifier.idgrec	129075
dc.rights.accessRights	open access	es_ES