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Large Area Perovskite Light-Emitting Diodes by Gas-Assisted Crystallization

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Large Area Perovskite Light-Emitting Diodes by Gas-Assisted Crystallization

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dc.contributor.author Prakasam, Vittal
dc.contributor.author Tordera Salvador, Daniel
dc.contributor.author Di Giacomo, Francesco
dc.contributor.author Abbel, Robert
dc.contributor.author Langen, Arjan
dc.contributor.author Gelinck, Gerwin
dc.contributor.author Bolink, Henk
dc.date.accessioned 2020-06-19T10:07:11Z
dc.date.available 2020-06-19T10:07:11Z
dc.date.issued 2019
dc.identifier.citation Prakasam, Vittal Tordera, Daniel Di Giacomo, Francesco Abbel, Robert Langen, Arjan Gelinck, Gerwin Bolink, Henk 2019 Large Area Perovskite Light-Emitting Diodes by Gas-Assisted Crystallization Journal Of Materials Chemistry C 7 3795 3801
dc.identifier.uri https://hdl.handle.net/10550/75143
dc.description.abstract Halide perovskites have been gaining considerable attention recently for use in light-emitting applications, due to their bandgap tunability, color purity and low cost fabrication methods. However, current fabrication techniques limit the processing to small-area devices. Here, we show that a facile N2 gas-quenching technique can be used to make methylammonium lead bromide-based perovskite light-emitting diodes (PeLEDs) with a peak luminance of 6600 cd/m2 and a current efficiency of 7.0 cd/A. We use this strategy to upscale PeLEDs to large-area substrates (230 cm2) by developing a protocol for slot-die coating combined with gas-quenching. The resulting large area devices (9 devices of each 4.46 cm2 per substrate) with three slot-die coated layers exhibit uniform emission with a peak luminance of 550 cd/m2 and a current efficiency of 2.6 cd/A. The reasons for the reduced performance and improvement routes are discussed. These results mark a vital step towards scalable manufacturing techniques for PeLEDs.
dc.language.iso eng
dc.relation.ispartof Journal Of Materials Chemistry C, 2019, vol. 7, p. 3795 -3801
dc.subject Materials
dc.title Large Area Perovskite Light-Emitting Diodes by Gas-Assisted Crystallization
dc.type journal article es_ES
dc.date.updated 2020-06-19T10:07:12Z
dc.identifier.doi 10.1039/C8TC06482B
dc.identifier.idgrec 133233
dc.rights.accessRights open access es_ES

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