Comprehensive defect suppression in perovskite nanocrystals for high-efficiency light-emitting diodes
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Kim, Y. H.; Kim, S.; Kakekhani, A.; Park, J.; Park, J.; Lee, Y. H.; Xu, H.; Nagane, S.; Wexler, R. B.; Kim, D. H.; Hyeon Jo, S.; Martínez Sarti, Laura; Tan, P.; Sadhanala, A.; Park, G. S.; Kim, Y. W.; Hu, B.; Bolink, Henk; Yoo, S.; Friend, R. H.; Rappe, A. M.; Lee, T.W.
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Aquest document és un/a article, creat/da en: 2021
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Electroluminescence efficiencies of metal halide perovskite nanocrystals (PNCs) are limited by a lack of material strategies that can both suppress the formation of defects and enhance the charge carrier confinement. Here we report a one-dopant alloying strategy that generates smaller, monodisperse colloidal particles (confining electrons and holes, and boosting radiative recombination) with fewer surface defects (reducing non-radiative recombination). Doping of guanidinium into formamidinium lead bromide PNCs yields limited bulk solubility while creating an entropy-stabilized phase in the PNCs and leading to smaller PNCs with more carrier confinement. The extra guanidinium segregates to the surface and stabilizes the undercoordinated sites. Furthermore, a surface-stabilizing 1,3,5-tris(bromomethyl)-2,4,6-triethylbenzene was applied as a bromide vacancy healing agent. The result is highly efficient PNC-based light-emitting diodes that have current efficiency of 108 cd A−1 (external quantum efficiency of 23.4%), which rises to 205 cd A−1 (external quantum efficiency of 45.5%) with a hemispherical lens
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