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Sebastia-Luna, Paz; Sessolo, Michele; Palazón Huet, Francisco; Bolink, Henk | |||
Aquest document és un/a article, creat/da en: 2021 | |||
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Herein, the preparation of fully vacuum-processed bismuth triiodide solar cells with low annealing temperature is reported. Planar n-i-p devices are prepared using a thin compact SnO2 layer as the electron extraction layer and an electron blocking/hole extraction bilayer consisting of an intrinsic and doped organic hole-transport molecule. Using this configuration, herein, higher fill-factors and overall power conversion efficiencies than with conventional solution-processed hole transport materials are achieved. | |||
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