In this work we report on steady-state and time-resolved photoluminescence (PL) measurements in nitrogen doped p-type indium selenide in the 33-210-K temperature range. In samples with low nitrogen concentration the photoluminescence spectrum consists of exciton-related peaks and a band-to-acceptor recombination peak (2.1-μs lifetime) with LO-phonon replica. An ionization energy of 65.5 meV is proposed for the nitrogenrelated acceptor. A long-lived (18 μs) component, which consists of an asymmetric broadband centered around the acceptor peak, has been also detected by means of time-resolved PL. Samples with a higher nitrogen concentration show a PL spectrum that mainly consists of the asymmetric long-lived broadband that can be associated to a complex center. The asymmetric shape of this band is quantitatively accounted for in the framework of the configuration coordinate model for complex centers. Under the assumption that the nitrogen related acceptor is shallow, the Gerlach-Pollman theory allows an estimate of the hole's effective masses.