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ZnS Ultrathin interfacial layers for optimizing carrier management in Sb2S3-based photovoltaics

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ZnS Ultrathin interfacial layers for optimizing carrier management in Sb2S3-based photovoltaics

dc.contributor.author	Büttner, Pascal
dc.contributor.author	Scheler, Florian
dc.contributor.author	Pointer, Craig
dc.contributor.author	Döhler, Dirk
dc.contributor.author	Yokosawa, Tadahiro
dc.contributor.author	Spiecker, Erdmann
dc.contributor.author	Boix, Pablo P.
dc.contributor.author	Young, Elizabeth R.
dc.contributor.author	Mínguez-Bacho, Ignacio
dc.contributor.author	Bachmann, Julien
dc.date.accessioned	2022-05-10T13:20:28Z
dc.date.available	2022-05-10T13:20:28Z
dc.date.issued	2021
dc.identifier.citation	Büttner, Pascal Scheler, Florian Pointer, Craig Döhler, Dirk Yokosawa, Tadahiro Spiecker, Erdmann Boix, Pablo P. Young, Elizabeth R. Mínguez-Bacho, Ignacio Bachmann, Julien 2021 ZnS Ultrathin interfacial layers for optimizing carrier management in Sb2S3-based photovoltaics Acs Applied Materials & Interfaces 13 10 11861 11868
dc.identifier.uri	https://hdl.handle.net/10550/82706
dc.description.abstract	Antimony chalcogenides represent a family of materials of low toxicity and relative abundance, with a high potential for future sustainable solar energy conversion technology. However, solar cells based on antimony chalcogenides present open-circuit voltage losses that limit their efficiencies. These losses are attributed to several recombination mechanisms, with interfacial recombination being considered as one of the dominant processes. In this work, we exploit atomic layer deposition (ALD) to grow a series of ultrathin ZnS interfacial layers at the TiO2/Sb2S3 interface to mitigate interfacial recombination and to increase the carrier lifetime. ALD allows for very accurate control over the ZnS interlayer thickness on the ångström scale (0-1.5 nm) and to deposit highly pure Sb2S3. Our systematic study of the photovoltaic and optoelectronic properties of these devices by impedance spectroscopy and transient absorption concludes that the optimum ZnS interlayer thickness of 1.0 nm achieves the best balance between the beneficial effect of an increased recombination resistance at the interface and the deleterious barrier behavior of the wide-bandgap semiconductor ZnS. This optimization allows us to reach an overall power conversion efficiency of 5.09% in planar configuration.
dc.language.iso	eng
dc.relation.ispartof	Acs Applied Materials & Interfaces, 2021, vol. 13, num. 10, p. 11861-11868
dc.subject	Cèl·lules fotoelèctriques
dc.subject	Òxids
dc.subject	Materials
dc.title	ZnS Ultrathin interfacial layers for optimizing carrier management in Sb2S3-based photovoltaics
dc.type	journal article	es_ES
dc.date.updated	2022-05-10T13:20:28Z
dc.identifier.doi	10.1021/acsami.0c21365
dc.identifier.idgrec	152604
dc.rights.accessRights	open access	es_ES