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Photoluminescence Enhancement by Band Alignment Engineering in MoS2/FePS3 van der Waals Heterostructures

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Photoluminescence Enhancement by Band Alignment Engineering in MoS2/FePS3 van der Waals Heterostructures

dc.contributor.author	Ramos, María
dc.contributor.author	Marques-Moros, Francisco
dc.contributor.author	Esteras, Dorye L.
dc.contributor.author	Mañas Valero, Samuel
dc.contributor.author	Henríquez-Guerra, Eudomar
dc.contributor.author	Gadea, Marcos
dc.contributor.author	Baldoví, José J.
dc.contributor.author	Canet Ferrer, José
dc.contributor.author	Coronado Miralles, Eugenio
dc.contributor.author	Calvo, M. Reyes
dc.date.accessioned	2022-08-30T10:38:34Z
dc.date.available	2022-08-30T10:38:34Z
dc.date.issued	2022
dc.identifier.citation	Ramos, María Marques-Moros, Francisco Esteras, Dorye L. Mañas Valero, Samuel Henríquez-Guerra, Eudomar Gadea, Marcos Baldoví, José J. Canet Ferrer, José Coronado Miralles, Eugenio Calvo, M. Reyes 2022 Photoluminescence Enhancement by Band Alignment Engineering in MoS2/FePS3 van der Waals Heterostructures Acs Applied Materials & Interfaces 14 29 33482 33490
dc.identifier.uri	https://hdl.handle.net/10550/83571
dc.description.abstract	Single-layer semiconducting transition metal dichalcogenides (2H-TMDs) display robust excitonic photoluminescence emission, which can be improved by controlled changes to the environment and the chemical potential of the material. However, a drastic emission quench has been generally observed when TMDs are stacked in van der Waals heterostructures, which often favor the nonradiative recombination of photocarriers. Herein, we achieve an enhancement of the photoluminescence of single-layer MoS2 on top of van der Waals FePS3. The optimal energy band alignment of this heterostructure preserves light emission of MoS2 against nonradiative interlayer recombination processes and favors the charge transfer from MoS2, an n-type semiconductor, to FePS3, a p-type narrow-gap semiconductor. The strong depletion of carriers in the MoS2 layer is evidenced by a dramatic increase in the spectral weight of neutral excitons, which is strongly modulated by the thickness of the FePS3 underneath, leading to the increase of photoluminescence intensity. The present results demonstrate the potential for the rational design of van der Waals heterostructures with advanced optoelectronic properties.
dc.language.iso	eng
dc.relation.ispartof	Acs Applied Materials & Interfaces, 2022, vol. 14, num. 29, p. 33482-33490
dc.subject	Materials
dc.title	Photoluminescence Enhancement by Band Alignment Engineering in MoS2/FePS3 van der Waals Heterostructures
dc.type	journal article	es_ES
dc.date.updated	2022-08-30T10:38:34Z
dc.identifier.doi	10.1021/acsami.2c05464
dc.identifier.idgrec	154582
dc.rights.accessRights	open access	es_ES