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Temperature-Dependent Dynamic on Resistance in Gamma-Irradiated AlGaN/GaN Power HEMTs
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Temperature-Dependent Dynamic on Resistance in Gamma-Irradiated AlGaN/GaN Power HEMTs
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| dc.contributor.author | Maset Sancho, Enrique | |
| dc.contributor.author | Martínez, Pedro J. | |
| dc.contributor.author | Sanchis Kilders, Esteban | |
| dc.contributor.author | Gilabert Palmer, David | |
| dc.date.accessioned | 2023-11-22T15:12:09Z | |
| dc.date.available | 2023-11-22T15:12:09Z | |
| dc.date.issued | 2022 | |
| dc.identifier.uri | https://hdl.handle.net/10550/91332 | |
| dc.description.abstract | Dynamic RON is a key parameter in terms of device reliability and the efficiency of power-switching converters. In this study, commercial off-the-shelf GaN-on-Si power high-electron-mobility transistors (HEMTs) were irradiated using different regimes of accumulative gamma rays with a 60Co source of photon energy (1.33 MeV), while a base temperature of 53 °C and 133 °C during the irradiation test was applied. This test campaign had the objective of investigating how the combination of gamma irradiation and temperature affects dynamic on-resistance (RON) behaviour. The results indicated that gate voltage bias stress affected the degradation of dynamic on-resistance when irradiation was applied, and that temperature was an accelerating factor in dynamic on-resistance degradation. Finally, we obtained a partial reduction in dynamic RON when a total ionising dose of around 140 krad(SiO2) was applied and the base temperature during the irradiation test was not high. | |
| dc.language.iso | eng | |
| dc.relation.ispartof | Applied Sciences-Basel, 2022, vol. 12, num. 22, p. 1-14 | |
| dc.source | Maset E, Martín-Holgado P, Morilla Y, Gilabert D, Sanchis-Kilders E, Martínez PJ. Temperature-Dependent Dynamic on Resistance in Gamma-Irradiated AlGaN/GaN Power HEMTs. Applied Sciences. 2022; 12(22):11578. https://doi.org/10.3390/app122211578 | |
| dc.subject | enginyeria elèctrica | |
| dc.title | Temperature-Dependent Dynamic on Resistance in Gamma-Irradiated AlGaN/GaN Power HEMTs | |
| dc.type | journal article | |
| dc.date.updated | 2023-11-22T15:12:10Z | |
| dc.identifier.doi | 10.3390/app122211578 | |
| dc.identifier.idgrec | 155926 | |
| dc.rights.accessRights | open access |
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