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Optimized Design of 1 MHz Intermediate Bus Converter Using GaN HEMT for Aerospace Applications

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Optimized Design of 1 MHz Intermediate Bus Converter Using GaN HEMT for Aerospace Applications

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dc.contributor.author	Maset Sancho, Enrique
dc.contributor.author	Ejea Martí, Juan Bautista
dc.contributor.author	Ferreres Sabater, Agustín
dc.contributor.author	Lizán, José Luis
dc.contributor.author	Blanes, Jose Manuel
dc.contributor.author	Sanchis Kilders, Esteban
dc.contributor.author	Garrigós, Ausias
dc.date.accessioned	2023-11-23T08:51:40Z
dc.date.available	2023-11-23T08:51:40Z
dc.date.issued	2020
dc.identifier.uri	https://hdl.handle.net/10550/91351
dc.description.abstract	This paper presents the possibility of using Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) instead of the conventional silicon metal oxide semiconductor field effect transistor (MOSFET) to implement a high-frequency intermediate bus converter (IBC) as part of a typical distributed power architecture used in a space power application. The results show that processing the power at greater frequencies is possible with a reduction in mass and without impacting the system efficiency. The proposed solution was experimentally validated by the implementation of a 1 MHz zero-voltage and zero-current switching (ZVZCS) current-fed half-bridge converter with synchronous rectification compared with the same converter using silicon as the standard technology on power switches and working at 100 kHz. In conclusion, the replacement of silicon (Si) transistors by GaN HEMTs is feasible, and GaN HEMTs are promising next-generation devices in the power electronics field and can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters. The best physical properties of GaN HEMTs, such as inherent radiation hardness, low on resistance and parasitic capacitances, allow them to switch at higher frequencies with high efficiency achieving higher power density. We present an optimized design procedure to guaranty the zero-voltage switching condition that enables the power density to be increased without a penalization of the efficiency.
dc.language.iso	eng
dc.relation.ispartof	Energies, 2020, vol. 13, num. 24, p. 6583
dc.source	Maset, E.; Ejea, J.B.; Ferreres, A.; Lizán, J.L.; Blanes, J.M.; Sanchis-Kilders, E.; Garrigós, A. Optimized Design of 1 MHz Intermediate Bus Converter Using GaN HEMT for Aerospace Applications. Energies 2020, 13, 6583. https://doi.org/10.3390/en13246583
dc.subject	electrònica
dc.subject	física
dc.title	Optimized Design of 1 MHz Intermediate Bus Converter Using GaN HEMT for Aerospace Applications
dc.type	journal article
dc.date.updated	2023-11-23T08:51:40Z
dc.identifier.doi	10.3390/en13246583
dc.identifier.idgrec	143336
dc.rights.accessRights	open access