NAGIOS: RODERIC FUNCIONANDO

Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs

Repositori DSpace/Manakin

Valencià Castellano

Inici
Investigació
e-prints
22 - Física
Visualitza element

IMPORTANT: Aquest repositori està en una versió antiga des del 3/12/2023. La nova instal.lació está en https://roderic.uv.es/

Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs

Mostra el registre parcial de l'element

dc.contributor.author	Martínez, Pedro J.
dc.contributor.author	Maset Sancho, Enrique
dc.contributor.author	P. Martín-Holgado
dc.contributor.author	Morilla, Yolanda
dc.contributor.author	Sanchis Kilders, Esteban
dc.contributor.author	Gilabert Palmer, David
dc.date.accessioned	2023-11-23T10:39:14Z
dc.date.available	2023-11-23T10:39:14Z
dc.date.issued	2019
dc.identifier.uri	https://hdl.handle.net/10550/91370
dc.description.abstract	GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters, where high frequencies and voltages are also needed. Its wide band gap (WBG), large breakdown electric field, and thermal stability improve actual silicon performances. However, at the moment, GaN HEMT technology suffers from some reliability issues, one of the more relevant of which is the dynamic on-state resistance (RON_dyn) regarding power switching converter applications. In this study, we focused on the drain-to-source on-resistance (RDSON) characteristics under 60Co gamma radiation of two different commercial power GaN HEMT structures. Different bias conditions were applied to both structures during irradiation and some static measurements, such as threshold voltage and leakage currents, were performed. Additionally, dynamic resistance was measured to obtain practical information about device trapping under radiation during switching mode, and how trapping in the device is affected by gamma radiation. The experimental results showed a high dependence on the HEMT structure and the bias condition applied during irradiation. Specifically, a free current collapse structure showed great stability until 3.7 Mrad(Si), unlike the other structure tested, which showed high degradation of the parameters measured. The changes were demonstrated to be due to trapping effects generated or enhanced by gamma radiation. These new results obtained about RON_dyn will help elucidate trap behaviors in switching transistors.
dc.language.iso	eng
dc.relation.ispartof	Materials, 2019, vol. 12, num. 17, p. 1-15
dc.source	Martínez, P.J.; Maset, E.; Martín-Holgado, P.; Morilla, Y.; Gilabert, D.; Sanchis-Kilders, E. Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs. Materials 2019, 12, 2760. https://doi.org/10.3390/ma12172760
dc.subject	electrònica
dc.subject	física
dc.subject	electrònica materials
dc.subject	high-electron-mobility transistor (HEMT)	en
dc.subject	gallium nitride (GaN)	en
dc.subject	radiation hardness	en
dc.subject	assurance testing	en
dc.subject	radiation effects	en
dc.subject	total ionizing dose (TID)	en
dc.title	Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs
dc.type	journal article
dc.date.updated	2023-11-23T10:39:14Z
dc.identifier.doi	10.3390/ma12172760
dc.identifier.idgrec	140103
dc.rights.accessRights	open access