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Correlation between Zn vacancies and photoluminescence emission in ZnO films.

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Correlation between Zn vacancies and photoluminescence emission in ZnO films.

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Zubiaga, A.; García, J. A.; Plazaola, F.; Tuomisto, F.; Saarinen, K.; Zúñiga Pérez, Jesús; Muñoz Sanjosé, Vicente

Aquest document és un/a article, creat/da en: 2006

Este documento está disponible también en : http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000099000005053516000001&idtype=cvips&prog=normal&doi=10.1063/1.2175476

Photoluminescence and positron annihilation spectroscopy have been used to characterize and identify vacancy-type defects produced in ZnO films grown on sapphire by metal-organic chemical-vapor deposition. The photoluminescence of the samples in the near band edge region has been studied, paying particular attention to the emission at 370.5 nm (3.346 eV). This emission has been correlated to the concentration of Zn vacancies in the films, which has been determined by positron annihilation spectroscopy.

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