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Correlation between Zn vacancies and photoluminescence emission in ZnO films.

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Correlation between Zn vacancies and photoluminescence emission in ZnO films.

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dc.contributor.author	Zubiaga, A.
dc.contributor.author	García, J. A.
dc.contributor.author	Plazaola, F.
dc.contributor.author	Tuomisto, F.
dc.contributor.author	Saarinen, K.
dc.contributor.author	Zúñiga Pérez, Jesús
dc.contributor.author	Muñoz Sanjosé, Vicente
dc.date.accessioned	2010-05-26T11:34:53Z
dc.date.available	2010-05-26T11:34:53Z
dc.date.issued	2006
dc.identifier.citation	ZUBIAGA, A. ; GARCÍA, J. A. ; PLAZAOLA, F. ; TUOMISTO, F. ; SAARINEN, K. ; ZÚÑIGA-PÉREZ, J. ; MUÑOZ-SANJOSÉ, V. Correlation between Zn vacancies and photoluminescence emission in ZnO films. En: Journal of Applied Physics, 2006, vol. 99	en
dc.identifier.uri	http://hdl.handle.net/10550/11213
dc.description.abstract	Photoluminescence and positron annihilation spectroscopy have been used to characterize and identify vacancy-type defects produced in ZnO films grown on sapphire by metal-organic chemical-vapor deposition. The photoluminescence of the samples in the near band edge region has been studied, paying particular attention to the emission at 370.5 nm (3.346 eV). This emission has been correlated to the concentration of Zn vacancies in the films, which has been determined by positron annihilation spectroscopy.	en_US
dc.language.iso	en	en
dc.subject	Zinc compounds ; II-VI semiconductors ; Wide band gap semiconductors ; Semiconductor thin films ; Positron annihilation ; Cacancies (crystal) ; MOCVD	en
dc.title	Correlation between Zn vacancies and photoluminescence emission in ZnO films.	en
dc.type	journal article	es_ES
dc.subject.unesco	UNESCO::FÍSICA	en
dc.identifier.doi	10.1063/1.2175476	en
dc.type.hasVersion	VoR	es_ES
dc.identifier.url	http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000099000005053516000001&idtype=cvips&prog=normal&doi=10.1063/1.2175476	en