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Photoconductivity and photovoltaic effect in indium selenide

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Photoconductivity and photovoltaic effect in indium selenide

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Segura García del Río, Alfredo; Guesdon, J.P.; Besson, J.M.; Chevy, A.

Aquest document és un/a article, creat/da en: 1983

Transport and phototransport properties of crystalline indium monoselenide (InSe) doped with a variety of elements are reported. Measured mobilities, lifetimes, and effective diffusion lengths of photoexcited carriers are used to interpret electrical and photovoltaic properties of several different structures. These include p‐n junctions, bismuth/p‐type InSe, platinum/n‐type InSe, and indium tin oxyde (ITO)/p‐type InSe. External solar efficiencies of the best devices are between 5% and 6%. The influence on the efficiency of the various parameters is evaluated, and ways of improvement are discussed.

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