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Photoconductivity and photovoltaic effect in indium selenide

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Photoconductivity and photovoltaic effect in indium selenide

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dc.contributor.author Segura García del Río, Alfredo
dc.contributor.author Guesdon, J.P.
dc.contributor.author Besson, J.M.
dc.contributor.author Chevy, A.
dc.date.accessioned 2010-06-08T11:06:30Z
dc.date.available 2010-06-08T11:06:30Z
dc.date.issued 1983
dc.identifier.citation J. Appl. Phys. 54, 876 (1983) en
dc.identifier.uri http://hdl.handle.net/10550/12923
dc.description.abstract Transport and phototransport properties of crystalline indium monoselenide (InSe) doped with a variety of elements are reported. Measured mobilities, lifetimes, and effective diffusion lengths of photoexcited carriers are used to interpret electrical and photovoltaic properties of several different structures. These include p‐n junctions, bismuth/p‐type InSe, platinum/n‐type InSe, and indium tin oxyde (ITO)/p‐type InSe. External solar efficiencies of the best devices are between 5% and 6%. The influence on the efficiency of the various parameters is evaluated, and ways of improvement are discussed. en_US
dc.language.iso en en
dc.subject Indium Selenides ; Photoconductivity ; Photovoltaic Effect ; Experimental Data ; Crystals ; Doped Materials ; Mobility ; Lifetime ; Diffusion Length ; Charge Carriers ; Electrical Properties ; P−N Junctions ; P−Type Conductors ; N−Type Conductors ; Bismuth ; Platinum ; Indium Compounds ; Tin Oxides ; Efficiency en
dc.title Photoconductivity and photovoltaic effect in indium selenide en
dc.type journal article es_ES
dc.subject.unesco UNESCO::FÍSICA en
dc.identifier.doi 10.1063/1.332050 en
dc.type.hasVersion VoR es_ES

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