Mostra el registre parcial de l'element
dc.contributor.author | Segura García del Río, Alfredo | |
dc.contributor.author | Guesdon, J.P. | |
dc.contributor.author | Besson, J.M. | |
dc.contributor.author | Chevy, A. | |
dc.date.accessioned | 2010-06-08T11:06:30Z | |
dc.date.available | 2010-06-08T11:06:30Z | |
dc.date.issued | 1983 | |
dc.identifier.citation | J. Appl. Phys. 54, 876 (1983) | en |
dc.identifier.uri | http://hdl.handle.net/10550/12923 | |
dc.description.abstract | Transport and phototransport properties of crystalline indium monoselenide (InSe) doped with a variety of elements are reported. Measured mobilities, lifetimes, and effective diffusion lengths of photoexcited carriers are used to interpret electrical and photovoltaic properties of several different structures. These include p‐n junctions, bismuth/p‐type InSe, platinum/n‐type InSe, and indium tin oxyde (ITO)/p‐type InSe. External solar efficiencies of the best devices are between 5% and 6%. The influence on the efficiency of the various parameters is evaluated, and ways of improvement are discussed. | en_US |
dc.language.iso | en | en |
dc.subject | Indium Selenides ; Photoconductivity ; Photovoltaic Effect ; Experimental Data ; Crystals ; Doped Materials ; Mobility ; Lifetime ; Diffusion Length ; Charge Carriers ; Electrical Properties ; P−N Junctions ; P−Type Conductors ; N−Type Conductors ; Bismuth ; Platinum ; Indium Compounds ; Tin Oxides ; Efficiency | en |
dc.title | Photoconductivity and photovoltaic effect in indium selenide | en |
dc.type | journal article | es_ES |
dc.subject.unesco | UNESCO::FÍSICA | en |
dc.identifier.doi | 10.1063/1.332050 | en |
dc.type.hasVersion | VoR | es_ES |