NAGIOS: RODERIC FUNCIONANDO

Photoluminescence study of excitons in homoepitaxial GaN

Repositori DSpace/Manakin

Valencià Castellano

Inici
Investigació
e-prints
22 - Física
Visualitza element

IMPORTANT: Aquest repositori està en una versió antiga des del 3/12/2023. La nova instal.lació está en https://roderic.uv.es/

Photoluminescence study of excitons in homoepitaxial GaN

Mostra el registre parcial de l'element

dc.contributor.author	Martínez Criado, Gema
dc.contributor.author	Miskys, C. R.
dc.contributor.author	Cros Stotter, Ana
dc.contributor.author	Ambacher, O.
dc.contributor.author	Cantarero Sáez, Andrés
dc.contributor.author	Stutzmann, M.
dc.date.accessioned	2010-06-21T10:09:57Z
dc.date.available	2010-06-21T10:09:57Z
dc.date.issued	2001
dc.identifier.citation	MARTÍNEZ CRIADO, G. ; MISKYS, C.R. ; CROS STOTTER, A. ; AMBACHER, O. ; CANTARERO, A. ; STTZMANN, M. Photoluminescence study of excitons in homoepitaxial GaN. En: Journal of Applied Phisics, 2001, vol. 90, no. 11	en
dc.identifier.uri	http://hdl.handle.net/10550/13015
dc.description.abstract	High-resolution photoluminescence spectra have been measured in high-quality homoepitaxial GaN grown on a free-standing GaN substrate with lower residual strain than in previous work. Unusually strong and well-resolved excitonic lines were observed. Based on free- and bound exciton transitions some important GaN parameters are derived. The Arrhenius plot of the free A exciton recombination yields a binding energy of 24.7 meV. Based on this datum, an accurate value for the band-gap energy, EG(4.3 K) = 3.506 eV, can be given. From the donor bound excitons and their “two-electron” satellites, the exciton localization energy and donor ionization energy are deduced. Finally, estimates of the electron and hole masses have been obtained within the effective mass approximation.	en_US
dc.language.iso	en	en
dc.subject	Gallium compounds ; III-V semiconductors ; Wide band gap semiconductors ; Semiconductor epitaxial layers ; Photoluminescence ; Excitons ; Effective mass	en
dc.title	Photoluminescence study of excitons in homoepitaxial GaN	en
dc.type	journal article	es_ES
dc.subject.unesco	UNESCO::FÍSICA	en
dc.identifier.doi	10.1063/1.1413713	en
dc.type.hasVersion	VoR	es_ES
dc.identifier.url	http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000090000011005627000001&idtype=cvips&prog=normal&doi=10.1063/1.1413713	en