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Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures

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Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures

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Martínez Criado, Gema; Cros Stotter, Ana; Cantarero Sáez, Andrés; Ambacher, O.; Miskys, C. R.; Dimitrov, R.; Stutzmann, M.; Smart, J.; Shealy, J. R.

Aquest document és un/a article, creat/da en: 2001

Este documento está disponible también en : http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000090000009004735000001&idtype=cvips&prog=normal&doi=10.1063/1.1408268

Ga-face AlGaN/GaN heterostructures with different sheet carrier concentrations have been studied by photoluminescence and Raman spectroscopy. Compared to bulk GaN, an energy shift of the excitonic emission lines towards higher energies was observed, indicating the presence of residual compressive strain in the GaN layer. This strain was confirmed by the shift of the E2 Raman line, from which biaxial compressive stresses ranging between 0.34 and 1.7 GPa were deduced. The spontaneous and piezoelectric polarizations for each layer of the heterostructures have been also calculated. The analysis of these quantities clarified the influence of the residual stress on the sheet electron concentration (ns). Possible causes for the discrepancies between the calculated and experimentally determined sheet carrier densities are briefly discussed.

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