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Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures

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Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures

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dc.contributor.author	Martínez Criado, Gema
dc.contributor.author	Cros Stotter, Ana
dc.contributor.author	Cantarero Sáez, Andrés
dc.contributor.author	Ambacher, O.
dc.contributor.author	Miskys, C. R.
dc.contributor.author	Dimitrov, R.
dc.contributor.author	Stutzmann, M.
dc.contributor.author	Smart, J.
dc.contributor.author	Shealy, J. R.
dc.date.accessioned	2010-06-21T10:27:21Z
dc.date.available	2010-06-21T10:27:21Z
dc.date.issued	2001
dc.identifier.citation	MARTÍNEZ CRIADO, G. ; CROS, A. ; CANTARERO, A. ; AMBACHER, O. ; MISKYS, C.R. ; DIMITROV, R. ; STUTZMANN, M. ; SMART, J. ; SHEALY, J.R. Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures. En: Journal of Applied Phisics, 2001, vol. 90, no. 9	en
dc.identifier.uri	http://hdl.handle.net/10550/13028
dc.description.abstract	Ga-face AlGaN/GaN heterostructures with different sheet carrier concentrations have been studied by photoluminescence and Raman spectroscopy. Compared to bulk GaN, an energy shift of the excitonic emission lines towards higher energies was observed, indicating the presence of residual compressive strain in the GaN layer. This strain was confirmed by the shift of the E2 Raman line, from which biaxial compressive stresses ranging between 0.34 and 1.7 GPa were deduced. The spontaneous and piezoelectric polarizations for each layer of the heterostructures have been also calculated. The analysis of these quantities clarified the influence of the residual stress on the sheet electron concentration (ns). Possible causes for the discrepancies between the calculated and experimentally determined sheet carrier densities are briefly discussed.	en_US
dc.language.iso	en	en
dc.subject	Aluminium compounds ; Gallium compounds ; III-V semiconductors ; Wide band gap semiconductors ; Semiconductor heterojunctions ; Two-dimensional electron gas ; Electron density ; Internal stresses ; Photoluminescence ; Raman spectra ; Excitons ; Interface states ; Piezoelectric semiconductors ; Dielectric polarisation	en
dc.title	Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures	en
dc.type	journal article	es_ES
dc.subject.unesco	UNESCO::FÍSICA	en
dc.identifier.doi	10.1063/1.1408268	en
dc.type.hasVersion	VoR	es_ES
dc.identifier.url	http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000090000009004735000001&idtype=cvips&prog=normal&doi=10.1063/1.1408268	en