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Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers

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Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers

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dc.contributor.author Martínez Pastor, Juan Pascual
dc.contributor.author Fuster, David
dc.contributor.author Abellán, M.
dc.contributor.author Anguita, J.
dc.contributor.author Sochinskii, N. V.
dc.date.accessioned 2010-05-03T12:04:17Z
dc.date.available 2010-05-03T12:04:17Z
dc.date.issued 2008
dc.identifier.citation MARTÍNEZ-PASTOR, J. ; FUSTER, D. ; ABELLÁN, M. ; ANGUITA, J. ; SOCHINSKII, N.V. Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers. En: Journal of Applied Physics, 2008, vol. 103 en
dc.identifier.uri http://hdl.handle.net/10550/2333
dc.description.abstract We demonstrated the effect of reactive ion beam etching (RIBE) process on the PL properties of CdTe/sapphire metal organic vapor phase epitaxy layers. At optimum conditions, the RIBE attack does not make significant morphological changes but it results in an increase of the concentration of acceptor impurities. This was revealed by an increase of the overall photoluminescence (PL) intensity and, simultaneously, a decrease of the PL decay time, more important on the low energy side of PL spectrum due to the recombination of carriers in acceptor pairs. en_US
dc.language.iso en en
dc.subject Cadmium compounds ; Etching ; II-VI semiconductors ; Impurities ; Ion beam assisted deposition ; MOCVD ; Photoluminescence ; Sapphire ; Semiconductor epitaxial layers ; Spectral line intensity ; Vapour phase epitaxial growth en
dc.title Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers en
dc.type journal article es_ES
dc.subject.unesco UNESCO::FÍSICA en
dc.identifier.doi 10.1063/1.2874480 en
dc.type.hasVersion VoR es_ES
dc.identifier.url http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000103000005056108000001&idtype=cvips&prog=normal&doi=10.1063/1.2874480 en

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