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Size and emission wavelength control of InAs/InP quantum wires

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Size and emission wavelength control of InAs/InP quantum wires

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Fuster, David; González, Luisa; González, Yolanda; Ujué González, María; Martínez Pastor, Juan Pascual

Aquest document és un/a article, creat/da en: 2005

Este documento está disponible también en : http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000098000003033502000001&idtype=cvips&prog=normal&doi=10.1063/1.1996307

For a certain heteroepitaxial system, the optical properties of self-assembled nanostructures basically depend on their size. In this work, we have studied different ways to modify the height of InAs/InP quantum wires (QWrs) in order to change the photoluminescence emission wavelength. One procedure consists of changing the QWr size by varying the amount of InAs deposited. The other two methods explored rely on the control of As/P exchange process, in one case during growth of InAs on InP for QWr formation and in the other case during growth of InP on InAs for QWr capping. The combination of the three approaches provides a fine tuning of QWr emission wavelength between 1.2 and 1.9 μm at room temperature.

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