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Size and emission wavelength control of InAs/InP quantum wires

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Size and emission wavelength control of InAs/InP quantum wires

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dc.contributor.author Fuster, David
dc.contributor.author González, Luisa
dc.contributor.author González, Yolanda
dc.contributor.author Ujué González, María
dc.contributor.author Martínez Pastor, Juan Pascual
dc.date.accessioned 2010-05-04T07:50:34Z
dc.date.available 2010-05-04T07:50:34Z
dc.date.issued 2005
dc.identifier.citation FUSTER, David ; GONZÁLEZ, Luisa ; GONZÁLEZ, Yolanda ; UJUÉ GONZÁLEZ, María ; MARTÍNEZ PASTOR, Juan. Size and emission wavelength control of InAs/InP quantum wires. En: Journal of Applied Physics, 2005, vol. 98 en
dc.identifier.uri http://hdl.handle.net/10550/2351
dc.description.abstract For a certain heteroepitaxial system, the optical properties of self-assembled nanostructures basically depend on their size. In this work, we have studied different ways to modify the height of InAs/InP quantum wires (QWrs) in order to change the photoluminescence emission wavelength. One procedure consists of changing the QWr size by varying the amount of InAs deposited. The other two methods explored rely on the control of As/P exchange process, in one case during growth of InAs on InP for QWr formation and in the other case during growth of InP on InAs for QWr capping. The combination of the three approaches provides a fine tuning of QWr emission wavelength between 1.2 and 1.9 μm at room temperature. en_US
dc.language.iso en en
dc.subject Indium compounds ; III-V semiconductors ; Semiconductor quantum wires ; Self-assembly ; Photoluminescence en
dc.title Size and emission wavelength control of InAs/InP quantum wires en
dc.type journal article es_ES
dc.subject.unesco UNESCO::FÍSICA en
dc.identifier.doi 10.1063/1.1996307 en
dc.type.hasVersion VoR es_ES
dc.identifier.url http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000098000003033502000001&idtype=cvips&prog=normal&doi=10.1063/1.1996307 en

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