NAGIOS: RODERIC FUNCIONANDO

Raman study of self-assembled InAs/InP quantum wire stacks with varying spacer thickness

Repositori DSpace/Manakin

Valencià Castellano

Inici
Investigació
e-prints
22 - Física
Visualitza element

IMPORTANT: Aquest repositori està en una versió antiga des del 3/12/2023. La nova instal.lació está en https://roderic.uv.es/

Raman study of self-assembled InAs/InP quantum wire stacks with varying spacer thickness

Mostra el registre complet de l'element

Visualització (478.7Kb)

Angelova Ivanova, Todora Ivanova; Cros Stotter, Ana; Cantarero Sáez, Andrés; Fuster, David; González, Yolanda; González, L.

Aquest document és un/a article, creat/da en: 2008

Este documento está disponible también en : http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000104000003033523000001&idtype=cvips&prog=normal&doi=10.1063/1.2963703

Self-assembled InAs/InP (001) quantum wire stacks have been investigated by means of Raman scattering. The characteristics of the observed vibrational modes show clear evidence of confinement and atomic intermixing between As and P atoms from the wire and the spacer. The change in the intermixing with spacer layer thickness and growth temperature is investigated. Likewise, the effect of annealing on the exchange of As and P atoms is also studied. Resonance effects in confined and interface phonons are discussed for excitation in the vicinity of the InAs E1 critical point. Finally, the energy of the interface modes is related to the structural characteristics of the wires by comparing the experimental data with a lattice dynamic calculation based on the dielectric continuum model.

Veure al catàleg Trobes