NAGIOS: RODERIC FUNCIONANDO

Raman study of self-assembled InAs/InP quantum wire stacks with varying spacer thickness

Repositori DSpace/Manakin

Valencià Castellano

Inici
Investigació
e-prints
22 - Física
Visualitza element

IMPORTANT: Aquest repositori està en una versió antiga des del 3/12/2023. La nova instal.lació está en https://roderic.uv.es/

Raman study of self-assembled InAs/InP quantum wire stacks with varying spacer thickness

Mostra el registre parcial de l'element

dc.contributor.author	Angelova Ivanova, Todora Ivanova
dc.contributor.author	Cros Stotter, Ana
dc.contributor.author	Cantarero Sáez, Andrés
dc.contributor.author	Fuster, David
dc.contributor.author	González, Yolanda
dc.contributor.author	González, L.
dc.date.accessioned	2010-05-24T08:19:37Z
dc.date.available	2010-05-24T08:19:37Z
dc.date.issued	2008
dc.identifier.citation	ANGELOVA, T. ; CROS, A. ; CANTARERO, A. ; FUSTER, D. ; GONZÁLEZ, Y. ; GONZÁLEZ, L. Raman study of self-assembled InAs/InP quantum wire stacks with varying spacer thickness. En: Journal of Applied Physics, 2008, vol. 104	en
dc.identifier.uri	http://hdl.handle.net/10550/4368
dc.description.abstract	Self-assembled InAs/InP (001) quantum wire stacks have been investigated by means of Raman scattering. The characteristics of the observed vibrational modes show clear evidence of confinement and atomic intermixing between As and P atoms from the wire and the spacer. The change in the intermixing with spacer layer thickness and growth temperature is investigated. Likewise, the effect of annealing on the exchange of As and P atoms is also studied. Resonance effects in confined and interface phonons are discussed for excitation in the vicinity of the InAs E1 critical point. Finally, the energy of the interface modes is related to the structural characteristics of the wires by comparing the experimental data with a lattice dynamic calculation based on the dielectric continuum model.	en_US
dc.language.iso	en	en
dc.subject	Annealing ; Critical points ; III-V semiconductors ; Indium compounds ; Phonons ; Raman spectra ; Self-assembly ; Semiconductor quantum wires	en
dc.title	Raman study of self-assembled InAs/InP quantum wire stacks with varying spacer thickness	en
dc.type	journal article	es_ES
dc.subject.unesco	UNESCO::FÍSICA	en
dc.identifier.doi	10.1063/1.2963703	en
dc.type.hasVersion	VoR	es_ES
dc.identifier.url	http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000104000003033523000001&idtype=cvips&prog=normal&doi=10.1063/1.2963703	en