NAGIOS: RODERIC FUNCIONANDO
Phonon-plasmon coupling in Si doped GaN nanowires
Repositori DSpace/Manakin
- Inici
- Investigació
- e-prints
- 33 - Ciències Tecnológiques
- Visualitza element
IMPORTANT: Aquest repositori està en una versió antiga des del 3/12/2023. La nova instal.lació está en https://roderic.uv.es/
Phonon-plasmon coupling in Si doped GaN nanowires
Mostra el registre complet de l'element
|
Visualització
|
| Rozas-Jiménez, E.; Cros Stotter, Ana; Murcia Mascarós, Sonia; Fang, Zhihua; Daudin, Bruno | |||
| Aquest document és un/a article, creat/da en: 2016 | |||
|
|||
| The vibrational properties of silicon doped GaN nanowires with diameters comprised between 40 and 100 nm are studied by Raman spectroscopy through excitation with two different wavelengths: 532 and 405 nm. Excitation at 532 nm does not allow the observation of the coupled phonon-plasmon upper mode for the intentionally doped samples. Yet, excitation at 405 nm results in the appearance of a narrow peak at frequencies close to that of the uncoupled A1(LO) mode for all samples. This behavior points to phonon-plasmon scattering mediated by large phonon wave-vector in these thin and highly doped nanowires. | |||
| Veure al catàleg Trobes | |||