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Surface properties of AlInGaN/GaN heterostructure

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Surface properties of AlInGaN/GaN heterostructure

dc.contributor.author	Minj, Albert
dc.contributor.author	Skuridina, D.
dc.contributor.author	Cavalcoli, D.
dc.contributor.author	Cros Stotter, Ana
dc.contributor.author	Vogt, P.
dc.contributor.author	Kneissl, M.
dc.date.accessioned	2017-03-27T13:31:22Z
dc.date.available	2017-03-27T13:31:22Z
dc.date.issued	2016
dc.identifier.citation	Minj, Albert Skuridina, D. Cavalcoli, D. Cros Stotter, Ana Vogt, P. Kneissl, M. 2016 Surface properties of AlInGaN/GaN heterostructure Materials Science in Semiconductor Processing 55 26 31
dc.identifier.uri	http://hdl.handle.net/10550/57966
dc.description.abstract	Surface structural, electronic and electrical properties of the quaternary alloy AlInGaN/GaN heterostructures are investigated. Surface termination, atomic arrangement, electronic and electrical properties of the (0001) surface and (10-11) V-defect facets have been experimentally analyzed using various surface sensitive techniques including spectroscopy and microscopy. Moreover, the effect of sub-band gap (of the barrier layer) illumination on contact potential difference (VCPD) and the role of oxygen chemisorption have been studied.
dc.language.iso	eng
dc.relation.ispartof	Materials Science in Semiconductor Processing, 2016, vol. 55, p. 26-31
dc.subject	Ciència dels materials
dc.subject	Microscòpia
dc.title	Surface properties of AlInGaN/GaN heterostructure
dc.type	journal article	es_ES
dc.date.updated	2017-03-27T13:31:31Z
dc.identifier.doi	10.1016/j.mssp.2016.04.005
dc.identifier.idgrec	116581
dc.rights.accessRights	open access	es_ES