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Bottom‐Up Fabrication of Semiconductive Metal-Organic Framework Ultrathin Films

Repositori DSpace/Manakin

Valencià Castellano

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IMPORTANT: Aquest repositori està en una versió antiga des del 3/12/2023. La nova instal.lació está en https://roderic.uv.es/

Bottom‐Up Fabrication of Semiconductive Metal-Organic Framework Ultrathin Films

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Rubio-Giménez, Víctor; Galbiati, Marta; Castells-Gil, Javier; Almora-Barrios, Neyvis; Navarro-Sánchez, José; Escorcia-Ariza, Garin; Mattera, Michele; Arnold, Thomas; Rawle, Jonathan; Tatay Aguilar, Sergio; Coronado Miralles, Eugenio; Martí Gastaldo, Carlos

Aquest document és un/a article, creat/da en: 2018

Though generally considered insulating, recent progress on the discovery of conductive porous metal-organic frameworks (MOFs) offers new opportunities for their integration as electroactive components in electronic devices. Compared to classical semiconductors, these metal-organic hybrids combine the crystallinity of inorganic materials with easier chemical functionalization and processability. Still, future development depends on the ability to produce high-quality films with fine control over their orientation, crystallinity, homogeneity, and thickness. Here self-assembled monolayer substrate modification and bottom-up techniques are used to produce preferentially oriented, ultrathin, conductive films of Cu-CAT-1. The approach permits to fabricate and study the electrical response of MOF-based devices incorporating the thinnest MOF film reported thus far (10 nm thick).

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