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Photoluminescence Imaging and LBIC Characterization of Defects in mc-Si Solar Cells
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Photoluminescence Imaging and LBIC Characterization of Defects in mc-Si Solar Cells
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| Sánchez Domínguez, Luis Alberto; Moretón, A.; Guada, M.; Rodríguez-Conde, S.; Martínez, O.; González, M.A.; Jiménez, J. | |||
| Aquest document és un/a article, creat/da en: 2018 | |||
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| Today's photovoltaic market is dominated by multicrystalline silicon (mc-Si) based solar cells with around 70% of worldwide production. In order to improve the quality of the Si material, a proper characterization of the electrical activity in mc-Si solar cells is essential. A full-wafer characterization technique such as photoluminescence imaging (PLi) provides a fast inspection of the wafer defects, though at the expense of the spatial resolution. On the other hand, a study of the defects at a microscopic scale can be achieved through the light-beam induced current technique. The combination of these macroscopic and microscopic resolution techniques allows a detailed study of the electrical activity of defects in mc-Si solar cells. In this work, upgraded metallurgical-grade Si solar cells are studied using these two techniques. | |||
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